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題 名 | 化學氣相沈積鑽石薄膜性質之研究 |
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作 者 | 李源弘; 吳玉祥; 蔡明興; 柯賢文; 翁通楹; | 書刊名 | 材料科學 |
卷 期 | 25:3 1993.09[民82.09] |
頁 次 | 頁163-172 |
分類號 | 341.927 |
關鍵詞 | 化學; 氣相沈積; 薄膜; 鑽石; |
語 文 | 中文(Chinese) |
中文摘要 | 以化學氣相沈積法在低壓下合成鑽石薄膜己証明可行,本研究採用熱燈 絲化學氣相沈積法,通人甲烷和氫氣,在矽(111)基板上沈積生長鑽石薄膜,實驗 中改變各實驗參數如基板溫度、甲烷濃度、氣體流量、系統壓力等,以探討其對 沈積層生長速率、結晶性質和表面形態的影響。結果顯示,基板溫度升高時,成 核較不易,但表面原子的移動卻較容易,因此沈積層生長的速率變快,同時氫原 子自由基有利於鑽石結構成長,沈積層的結晶性質亦隨之變佳。另隨著甲烷濃 度、氣體流速、系統壓力的降低,沈積鑽石薄膜的品質與結晶性較佳。 |
英文摘要 | It has been proved that diamond films can be prepared by chemical vapor deposition (CVD) at low pressure. In this study, the diamond films were deposited on Si (111) wafer using mixture of CH�淮nd H�� by hot-filament CVD method. The effects of experimental parameters such as substrate temperature, methane concentration, flow rates and system pressure on the film properties were investigated. The examined properties included growth rates, crystalinity and surface morphologies. The results showed that nucleation was not easy with the increasing substrate temperature, but growth rate was enhanced due to the increasing mobility of surface atoms. At the same time, the existance of atomic hydrogen free radical would contribute to better crystalline properties and make the diamond growth more easily. High-quality diamond films were obtained by reducing methane concentrations, flow rates and system pressure. |
本系統中英文摘要資訊取自各篇刊載內容。