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題名 | 以無機化學氣相沈積法製作薄膜材料=Thin Film Materials Prepared by Inorganic Chemical Vapor Deposition |
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作者姓名(中文) | 李紫原; | 書刊名 | 化學 |
卷期 | 56:2 1998.06[民87.06] |
頁次 | 頁129-135 |
分類號 | 440.34 |
關鍵詞 | 薄膜; 化學氣相沈積; 金屬矽化物; 金屬碳化物; Thin film; Chemical vapor depositon metal silicide; Metal carbide; |
語文 | 中文(Chinese) |
中文摘要 | 本文以低壓化學氣相沈積法製作薄膜材料,利用各種滷化物與二氟次矽基為前驅 物,於反應溫度高於 500 ℃的條件下,沈積各種含矽材料於基材上,以 TiX �痊鬥e驅物製 作矽化鈦,以 TaX �N為前驅物製作矽化鉭,若以主族元素滷化物 GeX �痊鬥e驅物,則可得 到矽化鍺。 另一方面多晶的碳化鈦,也可由六氯乙烷及金屬鈦為前驅物在 800 ℃的低溫下 得到,其反應路徑在文中有詳盡的探討。 |
英文摘要 | This work deposited thin film materials by a low pressure chemical vapor deposition system on substrates. By using MX �a (M=Ti, Ta, Ge, X=F, Cl) and SiF �� as the precursors, the deposition reaction occurred at a temperature exceeding 500 ℃. According to our results, the composition of thin films is a MSi related to the precursors used. The total reaction pathway was studied in detail. On other hand, polycrystalline titanium carbides were deposited by using C �� Cl �� and titanium metal plate as the precursors, the carbonization reactions occurred at a temperature exceeding 800 ℃. Furthermore, the total reaction pathway was closely examined as well. |
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