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題名 | Transport Critical Current in Y-Ba-Cu-O Thin Films Prepared by DC Sputtering=直流濺鍍製作之釔鋇銅氧薄膜的傳輸臨界電流 |
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作者 | 賴再興; 李軼賢; 盧榮宏; | 書刊名 | 中原學報 |
卷期 | 21 1992.12[民81.12] |
頁次 | 頁31-37 |
分類號 | 337 |
關鍵詞 | 直流; 傳輸臨界電流; 薄膜; 濺鍍製作; 釔鋇銅氧; 超導薄膜; S-I-S接面; Superconducting films; Transport critical current; S-I-S junction; |
語文 | 英文(English) |
中文摘要 | 我們使用離軸式直流濺鍍法,從一具有化學劑量的YBa₂Cu₃0₇-x:塊狀靶在MgO(100)的基板上原位製作;釔鋇銅氧薄膜。從隨溫度而變的電流一電壓曲臘的量測結果顯示,在臨界溫度(Tc)附近的傳輸臨界電流(Ic)與溫度(T)的依變關係可以Ic∞(1一T/Tc)²表示,但在溫度低於0.57Tc時,Ic是以漸近地方式向S-I-S接面結構的特性曲線接近。 |
英文摘要 | In-situ superconducting Y-Ba-Cu-O thin firms were prepared by DC sputtering from a stoichiometric YBa₂Cu₃0₇-x target onto MgO (100) substrates. Experimental results of the temperature-dependent 1-V measurements show the temperature variation of the transport critical current near Tc can be expressed by Ic∞(I-T/Tc)²,while at temperatures lower than 0.57 Tc it approaches asymptotically to the characteristic curve of the S-I-S junction structure. |
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