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題 名 | Effects of Oxygen in Reactive Ion-assisted Bipolar DC Mmagnetron Sputtering of Ta[feaf]O邚and SiO[feaf]Films |
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作 者 | Tsai,Rung-ywan; Chu,C. W.; Chen,T. S.; Chang,C. S.; Hung,Jung-chung; | 書刊名 | 真空科技 |
卷 期 | 13:1 2000.03[民89.03] |
頁 次 | 頁25-32 |
分類號 | 440.33 |
關鍵詞 | 反應式離子助鍍雙極直流磁控濺鍍法; Ta[feaf]O邚薄膜; SiO[feaf]薄膜; 氧流量; 膜材; |
語 文 | 英文(English) |
中文摘要 | 利用反應式離子助鍍雙極直流磁控濺鍍法來濺鍍Ta和Si靶以製備Ta2O5 and SiO2薄膜。以Ar為濺鍍氣體,氧為反應氣體,並且探討氧的流量對膜材的沈積速率、光學性質、及抗水性之影響。氧氧以兩種不同方式輸入真空室:(1)靠近基板或者是 (2)輸入End-Hall Mark II離子源。經由離子源輸出之氧離子也導向基板。結果發現Ta2O5 and SiO2膜的沈積速率隨氧的流量降低而增加。但是不論氧氣是直接輸入靠近基板或者是輸入離子源,膜材的沈積速率沒有明顯差異。氧氣直接輸入離子源所得膜材的透光性比輸入基板附近所得膜材的透光性佳,意涵著氧離子淡度對膜材的透光性扮演一重要角色。經由浸水測試顯示以反應式離子助鍍雙極直流磁控濺鍍法所得膜材之抗水性極佳。 |
英文摘要 | Thin films of Ta2O5 and SiO2 are prepared by reactive ion-assisted bipolar DC magnetron sputtering of Ta and Si targets, respectively, using argon as the sputtering gas and oxygen as the reactant. The effects of oxygen flow rate on the deposition rate and optical and moisture resistant properties of as-deposited films are investigated. Two different oxygen flowing mechanism are applied: (1)fed near the glass substrate or (2)fed to the End-Hall Mark II ion gun. The ion species coming from the ion gun are directed to the substrate. It is found that the deposition rates of Ta2O5 and SiO2 films increase with decreasing the flow rate of oxygen. However, whether the oxygen gas was fed into the ion-gun source or the substrate, no obvious difference on the deposition rates of the films is observed. The films with the oxygen flowing through the ion gun are more transparent than those with the oxygen flowing directly to the substrate, implicating that the concentrations of oxygen ions play an important role. The moisture resistant properties of the as-deposited films are excellent as evidenced from the water immersion test. |
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