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題 名 | The Properties of the Broad Band Optical Detection of a Precipitational Free Y[feb5]Ba[feaf]Cu[feb0]O乣-δthin Films=無析出物Y[feb5]Ba[feaf]Cu[feb0]O乣-δ超導薄膜之寬帶光檢測特性 |
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作 者 | 陳宏仁; | 書刊名 | 樹德學報 |
卷 期 | 20 1997.07[民86.07] |
頁 次 | 頁125-143 |
分類號 | 440.33 |
關鍵詞 | 超導薄膜; 析出物; 濺鍍; 微橋; 光蝕刻; 輻射熱計; 響應度; 雜訊等效功率; 檢測度; Superconducting thin film; Precipitational; Sputtering; Microbridge; Photolithography; Bolometer; Responsivity; Noise equivalent power; Detectivity; |
語 文 | 英文(English) |
中文摘要 | 使用離軸式RF 濺鍍技術成長具有表面無析出物及非常平滑精糙度小於5 nm之 Y�湎a�浚u�記�f-δ(YBCO)超導薄膜。薄膜經光蝕刻技術製成寬×長=25×650 um�晰L橋式 元件,其T=76.1 K接近液態氮溫度(76.35K)。元件(輻射熱計)的轉變溫度,dR/dT及操作 溫度T可由偏壓電流來調變。意即在適當偏壓電流下一般的溫控系統將可由液態氮槽 來取代。量測元件的光電特性是使用低輻射功率之光源≦0.08 J/cm��-sec波長從0.633至 3.5 um,元件具相當寬的穩定操作溫度區(77.1∼77.7K)及電流區(8±1mA),及它的光 響應度與入射光源的波長無關。所以它是一個穩定的寬帶檢測器。當8mA偏壓電流及 不同入射光源調變在2Hz加在這光檢測器,此時操作溫度為77.35K(液態氮溫度),在 0.633∼3.5um 波段內其光響應度可高達2×10�嚨/W。在相同測試條件下,雜訊等效功率 (NEP) 及檢測度(D��)分別為4.34×10���| W.Hz 及3×10�ecm.Hz.W�笐薄C |
英文摘要 | The Y �� Ba �� Cu �� O �f - δ (YBCO) superconducting thin films with a precipitational free morphology and an extremely smooth surface of rms roughness less than 5 nm have been grown by an off-axis RF sputtering technique. The film was patterned into a 25×650 um �惴icrobridge by a conventional photolithography technique and has a superconducting transition T of 76.1 K nearby the liquid nitrogen temperature. The transition temperature, the dR/dT value as well as the operating temperature T of the microbridge can be tuned by the bias current. It means that the temperature control system can be substituted by a liquid nitrogen bath by choosing a proper bias current. The opto-electrical properties of the bolometer were measured by means of low power radiation sources, ≦ 0.08 J/cm ��-sec, with wavelength from 0.633 to 3.5 um. The bolometer has relative wide-stable operating temperature (77.1 ∼ 77.7K) and current (8 ±1mA) regions, and its responsivity independs of the radiation wavelengths that proved itself to be a broad band detector. When a bias current of 8 mA and various sources modulated at 2 Hz were applied on the microbridge at 77.35 K, the responsivity of the bolometer could reach as high as 2.3 × 10 �� V/W in all wavelengths. At the same condition, the noise equivalent power (NEP) and detectivity (D ��) have been measured to be 4.34 × 10 ���| W.Hz and 3 × 10 �ecm.Hz. W �笐� respectively. |
本系統中英文摘要資訊取自各篇刊載內容。