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題 名 | 以射頻濺鍍法備製非晶形三氧化鎢薄膜及其感測特性之研究=A Study of the Sensitive Properties of Amorphous Tungsten Oxide Thin Films using an Rf-Sputtering System |
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作 者 | 周榮泉; 江榮隆; | 書刊名 | 技術學刊 |
卷 期 | 13:3 1998.09[民87.09] |
頁 次 | 頁419-425 |
分類號 | 448.552 |
關鍵詞 | 非晶形三氧化鎢; 濺鍍系統; C-V曲線; EIS結構; Amorphous tungsten trioxide; a-WO[feb0]; Sputtering system; C-V curve; EIS; Eelectrolyte-insulator-semiconductor structure; |
語 文 | 中文(Chinese) |
中文摘要 | 在本論文的研究中,利用射頻反應式濺鍍系統備製非晶形三氧化鎢薄膜(a-WO ) 其薄膜的厚度為400-2700A,係於基板溫度保持在100-150℃且反應時之總壓力為5-30×10 Torr之氬氣中濺鍍0.5-2小時,我們可計算出其濺鍍速率約為8-30 ╱min。 三氧化鎢薄膜的電阻係數將可藉由薄膜厚度與I-V特性曲線之量測結果,推算其薄膜的 電阻係數範圍約為10 ~10 Ω˙cm之間。 MOSFET元件的心臟部份係為MOS(Metal-Oxide-Semiconductor)的電容結構所構成;而 ISFET元件的主要操作機制係由EIS(Electrolyte-Insulator-Semiconductor)結構所決定。我們係 利用射頻(rf)濺鍍方式備製非晶形三氧化鎢(a-WO )薄膜於參考電極(reference electrode)╱電 解質(electrolyte)╱非晶形三氧化鎢(a-WO )╱二氧化矽(SiO )╱矽晶片(p-type)╱鋁(Al)結構 中,並利用其具有類似MOS電容之特性,將其置於不同的Ph緩衝溶液中偵測離子敏感度, 藉由量測電容-電壓(C-V)的特性曲線來探討其感測膜之特性。 |
英文摘要 | In our study, the amorphous tungsten trioxide(a-WO ) thin films prepared using an rf reactively sputtering system have been investigated. The tungsten trioxide thin films with 400-2700 thickness were deposited on substrates maintained at 100-150℃ and a total pressure of 5-30X10- 3Torr in Ar gas for 0.5-2 hours, and we could obtain a deposition rate of about 8-30 /min. The electrical resistivity of the amorphous tungsten trioxide thin films was calculated from the measurement of I-V characteristics and thin film thickness. The electrical resistivity ranges about 10 ~10 Ω.cm. The heart of the MOSFET device is the MOS capacitor structure. Similarly, the main mechanism of the ISFET device is the EIS (Electrolyte-Insulator-Semiconductor) structure. We prepared the amorphous tungsten trioxide thin films using an rf sputtering system in the reference electrode/electrolyte/ a-WO /SiO /p-Si/Al structure, and used the properties of the MOS capacitor to detect the sensitivity of ions, which can be explained by the C-V characteristic curves in the different pH buffer solutions using the C-V measurement. |
本系統中英文摘要資訊取自各篇刊載內容。