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頁籤選單縮合
題名 | 高頻磁控濺鍍法在矽晶圓上成長TiO[feaf]及Y[feaf]O[feb0] |
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作者 | 黃世仁; 李中夏; | 書刊名 | 材料科學 |
卷期 | 27:3 1995.09[民84.09] |
頁次 | 頁237-240 |
分類號 | 440.34 |
關鍵詞 | 磁控濺鍍; 氧化鈦釔; 薄膜; RF-Magnetron sputtering; TiO[feaf]:Y[feaf]O[feb0]; Thin films; Doping effect; |
語文 | 中文(Chinese) |
中文摘要 | 本文報告以添加Y�烙�馬荓敦Q添加量對TiO�砟孚L結構、介電性及光學 性質之影響,薄膜生成方法是利用RF磁控濺鍍法於Ar及O�租V合氣氛下進行。基 板是(100)Si。靶材為TiO��+(0~20)Y�烙�假V合靶。通氧的目的為補充薄膜中不足 之氧分量。實驗中藉改變基板溫度及靶材添加Y�烙�陘壯t量,並進一步退火以 探討操作條件及熱處理對薄膜成長率、折射率、穿透率、表面形態、結晶性、微 結構及電性的影響。 實驗結果顯示,薄膜折射率介於2.2-2.47之間;可見光範圍內穿透率隨著Y�烙�飢t 量增加而提升;由XRD分析知薄膜為非晶質,退火後有結晶相產生,但添加雜質 者SEM及TEM測試結果與XRD一致;由MIS測試電性結果,介電常數約為50。 |
英文摘要 | RF-Magnetron sputtering deposition of TiO��:Y�烙�� thin films on Si in a low pressure ambient of O�� and Ar was investigated. The purpose of the work is to study the doping effect on the microstructure stability and the change of dielectric properties. The thin films obtained from the targets containing Y�烙�� upto 20 are characterized as functions of Y�烙�軏ontent, deposition and annealing temperatures. The results indicate that the refractiveindex is in the range of 2.2-2.47 inversely varying with Y�烙��. The transparency increases with Y�烙��. As determined by XRD and TEM analysis, the TiO�� films as deposited are amorphous while they recystallize and show significant grain growth upon annealing in O��.However, Y�� O�� doping prevents grain growth resulting in polycrystalline thin films of very small grain size. The dielectric constants vary from 50 to 28 which show a decrease with the increase of Y�烙��. The leakage current density of the Y�烙�� doped films is much lower than that of TiO�� without doping. |
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