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題名 | 離子化磁控濺鍍之薄膜的微結構與物性研究="Microstructure and Physical Properties of Ionized Magnetron Sputter Deposited Thin Films" Cheers |
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作者姓名(中文) | 邱國峰; 莫文皓; | 書刊名 | 真空科技 |
卷期 | 14:3 2001.10[民90.10] |
頁次 | 頁22-28 |
分類號 | 440.34 |
關鍵詞 | 離子化磁控濺鍍; 薄膜; 微結構; 物性; IMSD技術; |
語文 | 中文(Chinese) |
中文摘要 | 我們使用離子化磁控濺鍍(Ionized Magnetron Sputter Deposition, IMSD)技術藉由一個內建的射頻線圈於靶及基板間產生電感耦合電漿。這使得我們可同時精確的控制離子轟擊通量(來自射頻功率)和能量(來自基板偏壓)。藉由改變離子通量和轟擊離子的能量,薄膜的結構和性質,如結晶形態、晶粒大小、織構、應力與電性等可被精確的改質。我們發現沉積薄膜的微結構在薄膜成長的初始狀態受到離子轟擊的影響很顯著。使用IMSD技術,我們可精確的控制離子對沉積薄膜的轟擊來改善銀的結構和相關的性質。 |
英文摘要 | Ionised Magnetron Sputter Deposition (IMSD) technique uses a built-in rf coil to generate an inductively coupled plasma confined close to the substrate. This enables precise control of both bombarding ion flux (by rf power) and energy (by substrate bias). By varying the flux and energy of bombarding ions, film structure and properties, such as crystallography, grain size, film texture, film stress and electrical properties can be precisely modified. It is found that the microstructure of deposited films predominantly depends on the ion bombardment during the initial stages of film growth. Using the IMSD techniques, the structure and related properties of silver films have been modified by depositing films under precisely controlled ion bombardment. |
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