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題 名 | 以射頻磁控濺鍍法製備高介電鈦酸鍶鋇薄膜應用於動態隨機存取記憶體之研究=Eabrication and Characterization of High Dielectric (Ba, Sr) TiO[feb0]Thin Film Using RF Magnetron Sputtering for Dynamic Random Access Memory Application |
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作 者 | 李建興; 魏慕慈; 張守進; | 書刊名 | 真空科技 |
卷 期 | 13:3 2000.09[民89.09] |
頁 次 | 頁19-25 |
分類號 | 448.57 |
關鍵詞 | 射頻磁控濺鍍法; 高介電鈦酸鍶鋇薄膜; 動態隨機存取記憶體; 高介電係數材質; 電容器介電質; |
語 文 | 中文(Chinese) |
中文摘要 | 隨著元件尺寸的縮小,電容面積也隨之縮小,但儲存電荷仍須維持在一臨界值(~25tF/ceff),所以高介電係數材質作為動庇隨機存取記憶體中電容器介電質益形重要。而鈣鈦礦鈦酸鍶鋇則是目最為可行的材料。鈦酸鍶鋇薄膜具有下優點:低漏電流、高介電常數、低損等。在本文中,我們將鈦酸鍶鋇薄膜應用在金屬絕緣層半導體(MIS)電容中。我們針對金屬絕緣層半導體電容在各種不同薄膜厚度、濺射氧氣分壓及沉積溫度下之特性及在薄膜沉積後各回火條件下之物性及電性的探討。由以上所測的結,我們發現在氧壓50%下成長,再放入爐管通入氧氣經過一小時700℃熱退火處理的情況下,可得最佳的物理及電特性。其介電常數約為110,在偏壓1.5伏特時,其漏電流密度約為5×10-8A/cm2。 |
英文摘要 | An important application of high dielectric films is then incorporation it no Dynamic Random Access Memories (DRAMs) as the storage node capacitor dielectric. As device dimension are scaled down, the demand for small capacitor area while still maintaining a certain critical charge for DRAM capacitors become more stringent. The material of most promise at the present time is perovakite (Ba, Sr) TiO3 (BST). Attracive properties of BST, including high dielectric constant, low leakage current densit, and acceptably low loss tangent. In this study, the applivation of BST thin films for Metal-Insulator-Semiconductor (MIS) capaitors was investigated. We examined the haracteristics of MIS capacitor with various fim thickness, oxygen pressure, deposition temperature and effect of post-annealing condition on the physical properties (grain size, crytallinity) and electrical properties (leakage current, dielectric constant, and polarization) were investigated in details. |
本系統中英文摘要資訊取自各篇刊載內容。