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題 名 | Sb含量對Ag100-戓Sb戓可寫一次光碟記錄薄膜之光學性質的影響=Effect of Sb Content on the Optical Properties of Ag100-戓Sb戓 Write-Once Optical Recording Thin Film |
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作 者 | 李昭德; 郭博成; 陳伯威; 徐偉智; | 書刊名 | 國立臺灣大學工程學刊 |
卷 期 | 89 2003.10[民92.10] |
頁 次 | 頁21-27 |
專 輯 | 「材料」專輯 |
分類號 | 440.34 |
關鍵詞 | 射頻磁控濺鍍; Ag100-戓Sb戓合金薄膜; 反射率; Ag100-戓Sb戓alloy film; rf magnetron sputtering; Reflectance; |
語 文 | 中文(Chinese) |
中文摘要 | 本實驗採用射頻磁控濺鍍,在玻璃基板及表面自然氧化之Si基板上製備1000A之Ag100-xSbx合金薄膜,其中 x = 10.8 ~ 25.5 at.%;探討Sb含量對Ag100-xSbx合金薄膜之光學性質及微結構的影響。經測量反射率和溫度之關係,發現Ag100-xSbx薄膜在溫度約250°C ~ 275°C之間,反射率會產生很大的變化。光學性質量測及X-ray繞射分析結果顯示,初鍍Ag100-xSbx薄膜為反射率較高的ε'-AgSb結晶相,經300°C退火後,其結晶相並沒改變但反射率卻大幅下降,此乃由於晶粒尺寸及大小分佈大幅改變所致。初鍍Ag100-xSbx薄膜之光吸收率在波長λ = 400nm ~ 800nm範圍內均能夠維持一定的值,不會隨波長縮短而衰減 。由TEM微結構觀察發現,初鍍Ag80.9Sb19.1薄膜之晶粒大小約為5nm ~ 10nm,經300°C退火後則成長至10nm ~ 30nm,此薄膜在短波長405nm下,其退火前後的反射率對比值可達17%,具有應用在短波長高記錄密度光碟之潛力。 |
英文摘要 | Ag100-xSbx films with x = 10.8 ~ 25.5 at.% are fabricated on the glass and naturally oxidized silicon wafer substrates by rf magnetron sputtering. The effects of Sb content on the optical properties and microstructures of the film are investigated. It is found that a large reflection change occurs between 250°C and 275°C for all the films. From the measurement of optical properties and X-ray diffraction analysis, we found that the as-deposited film is a high reflectance ε'-AgSb phase. The reflectance decreases rapidly after annealing at 300°C, this is due to the huge change of grain size and grain size distribution. The absorption of Ag100-xSbx films remains constant at the wavelength between 400nm and 800nm. The grain size of as-deposited Ag80.9Sb19.1 film is about 5nm ~ 10nm and it grows up to 10nm ~ 30nm after annealing at 300°C. The reflective contrast of this film is as high as 17% for l = 405nm. This film is a promising candidate for short wavelength high-density optical recording application. |
本系統中英文摘要資訊取自各篇刊載內容。