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題 名 | Sulfur-Doped GaAs Epilayers Studied by Photoluminescence and Raman Scattering Spectra=硫摻雜砷化鎵薄膜之光激發螢光與拉曼散射光譜研究 |
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作 者 | 江國成; 張連璧; 呂維理; 施家頤; 劉正中; 鄭鴻業; 陸續; | 書刊名 | 中正嶺學報 |
卷 期 | 23:2 1995.01[民84.01] |
頁 次 | 頁141-151 |
分類號 | 336.516 |
關鍵詞 | 光激發螢光; 拉曼敵射; 硫; 摻雜; 簡併能階; 砷化鎵; Photoluminescence; Raman scatter; Sulfur; Dopant; Band filling; GaAs; |
語 文 | 英文(English) |
中文摘要 | 本研究係首次利用液相磊晶法以硫為摻雜物,生長砷化鎵薄膜,從一系 列不同濃度硫摻雜砷化鎵薄膜之光激發螢光譜(photoluminescence)行為中,清楚觀 察到三種相互影響消長之發光途徑。從高能量光譜峰值萃取出費米能量,並計算 三種理論模型,相互分析比較,明確得到:動量守�琠痁Y格拘束之躍遷規則以外 (relaxs the momentum selection rule)的發光途徑及價帶頂部之能態(densityof state)分 佈滲入能隙(Band-gap)中之證據。輔以拉曼散射光譜研究結果:擬電槳子模態 (plasmon-likemode)往高能處移,而縱向光聲子模態(longitudinal optic-phononmode) 能量未偏移,波形也未變寬,僅振幅衰減之現象,使我們更進一步了解硫摻雜生 長砷化鎵薄膜之光激發螢光譜行為特徵。 |
英文摘要 | Photoluminescence and Raman measurements are used to characterize the sulfur (S)-doped GaAs exitaxial layers which were grown on semi-insulator GaAs substrates byliquid phase epitaxy. The evolution of spectral line-shape on the doping level has beeninvestigated. Three radiative channels are unambiguously identified (i.e. direct band-to-band, donor related state-to-valence band tail state, and the filling of the conductionband state-to valence band tail state). At high sulfur doping levels, probabilities of thedirect band-to-band radiative transitions are perturbed and limited. In the mean time, theband-shrinkage radiative transition peak (donor related state-to- valence band tail state)shifts toward the low-energy side and Burstein-Moss peak (the filling of the conductionband state-to-valence band tail state) toward the higher energy side. With increasing S-doping level, the dominant radiative process gradually transfers from band-to-band channel to others. Relative to the undoped sample, Raman spectra indicate that the shifting of the plasmon-like mode to high frequencies is attributed to degenerancy free electron in band filling level. The decreasing intensity of LO mode is attributed to sulfur-dopant atoms noteffectively involving into polar interaction. |
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