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題名 | 藉由電熱製程達到可逆且精準控制二銻化鉬電晶體的摻雜=Reversible and Precisely Controllable p/n-Type Doping of MoTe₂ Transistors through Electrothermal Doping |
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作者 | 張原銘; 楊士賢; 林哲儀; 連振炘; 林彥甫; Chang, Yuan-ming; Yang, Shih-hsien; Lin, Che-yi; Lien, Chen-hsin; Lin, Yen-fu; |
期刊 | 真空科技 |
出版日期 | 20181200 |
卷期 | 31:4 2018.12[民107.12] |
頁次 | 頁30 |
分類號 | 448.552 |
語文 | chi |
關鍵詞 | 過渡金屬硫化物; 二銻化鉬; 摻雜; Transition metal dichalcogenides; MoTe₂; Doping; |