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題 名 | Fabricating δ-doped Layers by Ultra-High Vacuum Chemical-Vapor Deposition and Its Applications in FET=以超高真空化學汽相沈積法成長δ摻雜層及其應用於場效電晶體 |
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作 者 | 吳三連; 簡培偉; 張守進; | 書刊名 | 真空科技 |
卷 期 | 13:3 2000.09[民89.09] |
頁 次 | 頁4-11 |
分類號 | 448.57 |
關鍵詞 | 高平面摻雜技術; 場效電晶體; 元件技術; 超高真空化學汽相沈積法; |
語 文 | 英文(English) |
中文摘要 | 隨著元件尺寸微縮到次微米的範圍,一些無可避免的不良效應,如短通道效應、熱載子效應…等等,已經成為次微米元件的基本限制。為了克服這些效應,有許多方法陸續被提出,而高平面摻雜技術正是其中的一種。高平面摻雜可將摻雜之範圍侷限到只有幾個原子層的厚度,而達到摻雜區域的物理極限,應用在目前的超大型積體電路上,將有效改善短通道效應,是故對於新世代的元件技術而言,高平面摻雜將扮演相當重要的角色。我們將提出以超高真空化學汽相沈積法來研製高平面摻雜層,並利用二次離子質譜儀探討其特性,且完成高平面摻雜場效電晶體的製作。 |
英文摘要 | As the device dimension shrink to deep submicron regime, device scaling becomes increasingly difficult due to many fundamental problems. For small geometry devise, short channel effects such as punchthrough and hot carrier effects are fundamental limitations. The δ-doping has been shown to be one of the promising techniques for scaling down of device structure and the spatial width of doping profile. Using the technique not only can reach the ultimate physical limit of miniaturization normal to crystal surface but also can improve the short channel effects in conventional ULSI circuits. Blessed by the progress of the growing technology, we will growδ-doped layers by Ultra-High Vacuum Chemical-Vapor Deposition (UHV/CVD) and characterize such layers by secondary io mass spectroscopy (SIMS). Then, we will further apply δ-doped layers to fabricate δ-FET. |
本系統中英文摘要資訊取自各篇刊載內容。