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- Electrical Characteristics of In0.5Ga0.5P/GaAs Heterostructure-Emitter Bipolar Transistors Using Spacer Layers
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題 名 | Electrical Characteristics of In0.5Ga0.5P/GaAs Heterostructure-Emitter Bipolar Transistors Using Spacer Layers=以空間層改善磷化銦鎵/砷化鎵異質射極雙載子電晶體結構之電特性 |
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作 者 | 盧協益; 林育賢; 吳昌崙; 許渭州; | 書刊名 | 吳鳳學報 |
卷 期 | 6 1998.06[民87.06] |
頁 次 | 頁87-94 |
分類號 | 448.552 |
關鍵詞 | 低壓有機金屬化學汽相沉積法; 異質射極雙載子電晶體; 無摻雜之空間層; 射極薄化; 射極面積效應; 砷化鎵; 磷化銦鎵; HEBT; MOCVD; Undoped spacer; Emitter-size effect; Edge-thinning; GaAs; InGaP; |
語 文 | 英文(English) |