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題 名 | Influence of Nonunifrom Energetic Distribution of Density of States on the Edge Emissions Pectra of Highly Doped GaAs=p與n型摻雜GaAs磊晶膜能隙重整之光致發光譜 |
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作 者 | 江國成; | 書刊名 | 筧橋學報 |
卷 期 | 6 1999.09[民88.09] |
頁 次 | 頁395-412 |
分類號 | 341.37 |
關鍵詞 | 光致發光譜; 能帶重整; 近能隙發光帶; 砷化鎵; Photoluminescernce; Band-gap renormalization; Edge emission; GaAS; |
語 文 | 英文(English) |
中文摘要 | 本文之主題為液相磊晶法生長 p-及n-型砷化鎵之光致發光譜。從碳、硫元素摻雜 所生長砷化錠晶膜之光致發光譜行為中,觀察到能隙重整之發光譜特徵。為圓滿解釋此現象 ,除了一般稱 band-filling 效應及能帶尾能態形成之外,本文認為摻雜元素在禁帶中提供 之能帶尾能態分佈,並非均勻或漸近式的分佈,而係具有局部極值之分佈所致。在量測( T <300 K )溫區內變溫,p 型試片之光譜半寬對摻雜濃度之變化與文獻符合。 |
英文摘要 | The phenomenon band-gap renomalization has been measured using photoluminescence spectrocopy on heavily C-, S-doped, and compensated C-doped GaAs epilayers prepared by liquid phase epitaxy. We observe an inerease of PL line width as doping increased, which match the empirical regularities, whereas, the luminesecnec peak of compensated set of samples was rather more broad than those of C-doped samples. With increasing pump power the PL peak max of compensated C-doped one shift to higher energy, contrasts to what occurs in other set of C-doped samples. The temperature dependence position of the PL peak does not shift as the bandgap. The anomaly of peaks on the highly doped samples tends to be constant and does not follow the temperature dependence of the intrinsic band gap, which indicates that the electronic states involved in the emissions are associated with the modified band edges and with the counterbalance of the bandgap renormalization produced by the addition of dopants. Comparison of the luminescence spectra from the heavily S-doped GaAs to that of undoped matenal shows a red-shift peak coupled with a blue-shift high-energy edge of emission. The interpretation of these lines are postulated to originate coming from the recombination carriers with the (local extrema) non-uniform of states in band-tail structure. |
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