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- Enhanced Hot-Electron, Band-Filling, and Band-Tailing Photoluminescence from Heavily Sulfur-Doped GaAs Prepared by Liquid-Phase Epitaxy
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題名 | Enhanced Hot-Electron, Band-Filling, and Band-Tailing Photoluminescence from Heavily Sulfur-Doped GaAs Prepared by Liquid-Phase Epitaxy=禁帶能態、能帶填充及熱電子效應:高硫摻雜砷化鎵磊晶膜之光致發光譜特徵 |
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作 者 | 江國成; | 書刊名 | 筧橋學報 |
卷期 | 3 1996.09[民85.09] |
頁次 | 頁323-336 |
分類號 | 341.37 |
關鍵詞 | 光致發光譜; 能帶填充; 熱電子效應; 砷化鎵; Photoluminescence; Band filling; Hot-electron; GaAs; |
語文 | 英文(English) |
中文摘要 | 本文係以液相磊晶法生長之砷化鎵為研究主題,從一系列高濃度硫摻雜砷化鎵晶 膜之光致發光譜行為中,觀察到導電帶上方被電荷載子填充之能態與價電帶頂部延伸滲入能 隙內能態之間的發光遷移,並分別顯現高、低能方向遷移。僅單純以導電帶填充理論之峰譜 不足以解釋實驗發光線形,本文提出:必需加入與被填充之能態耦合的熱電子效應,兩者耦 合之結果,才能與實驗符合。 |
英文摘要 | Photoluminescence(PL) measurement is used to characterize the sulfur-doped GaAs epitaxial layers grown on GaAs: Cr substrates by liquid phase epitaxy. The dependence of spectral line shape as functions of free-carrier concentration has been investigated. Comparison of the luminescence spectra from the heavily doped GaAs to that of undoped material shows a red-shift peak coupled with a blue-shift high-energy edge of emission. The spectra reveal distinctly the cutting effect of the Fermi energy in their energy part. The interpretation of these lines considers it as coming from the recombination hot-electron with band-tail states. An enhancement of hot-electron Pl due to degenerate conditions in the conduction band has been observed in this study. In addition, the band-filling and band-tailing effect are also identified. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。