頁籤選單縮合
題名 | Doped-Channel SiGe Heterostructure Field-Effect Transistor=矽鍺異質結構高平面通道摻雜場效電晶體 |
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作者 | 李士勤; 吳三連; 張守進; 簡培偉; 林育名; 李軍鑫; | 書刊名 | 真空科技 |
卷期 | 14:4 2001.12[民90.12] |
頁次 | 頁32-37 |
分類號 | 448.552 |
關鍵詞 | 高平面摻雜通道; 矽化鍺; Delta-doped-channel; HFET; SiGe; |
語文 | 英文(English) |
中文摘要 | 隨著元件的尺寸進入深次微米的領域,元件的微縮越來越難。諸如:貫穿、熱載子效應等短通道效應的問題便造成元件微縮的瓶頸。然而高平面摻雜(δ-doping)的技術便是其中能有效解決深次微米元件的摻雜問題。我們和日本東京大學RCAST實驗室合作,使用固態源分子束磊晶(SSMBE)的機臺,在低溫550℃的環境下,成長一系列矽鍺材料高平面摻雜通道場效電晶體。在此篇論文中,我們將對於礎摻雜的三種不同摻雜位置的元件結構進行探討與研究。 |
英文摘要 | As the device dimension shrink to deep submicron regime, device scaling becomes increasingly difficult due to many fundamental problems. For small geometry devices, short channel effects such as punchthrough, and hot carrier effects are fundamental limitations. The δ-doping has been shown to be one of the promising techniques for scaling down of device structure and the spatial width of doping profile. Using the technique not only can reach the ultimate physical limit of miniaturization normal to crystal surface but also can improve the short channel effects in conventional ULSI circuits based on MOSFET. We cooperated with Research Center for advanced Science and Technology (RCAST), the University to Tokyo. We utilized low temperature (550℃) solid-source molecular beam epittaxy (SSMBE) to fabricate a series of Si1-xGex delta-doped-channel field effect transistors (DDCFETs), including Top, Center, and Bottom DDCFETs, using Boron as the dopants. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。