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頁籤選單縮合
題名 | 高折射率之新型透明導電薄膜=Novel Transparent Conductive Oxide of High Refractive Index |
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作者姓名(中文) | 李孟錡; 郭倩丞; 彭思翔; 陳昇暉; 李正中; | 書刊名 | 真空科技 |
卷期 | 24:2 2011.06[民100.06] |
頁次 | 頁43-49 |
分類號 | 448.59 |
關鍵詞 | 透明導電薄膜; 氧化鈦鈮; 磁控濺鍍; Transparent conducting oxide; TCO; Nb-doped anatase TiO₂; TNO; Magnetron sputtering method; |
語文 | 中文(Chinese) |
中文摘要 | 透明導電薄膜 (Transparent Conducting Oxide, TCO) 是一種重要的光電材 ,透明導電膜既有導電性質,在可 光區具又有透光性,光電產業中被廣泛應用在各種領域。氧化鈦鈮 (anataseTiO2:Nb, TNO) 具有發展潛 成為新型透明導電膜材料,與熱門的氧化銦錫比較,其屬於高折射率材料、在紅外光區有高透光性、化學穩定性佳並且也是備受矚目的光觸媒材料。利用磁控共濺鍍的方法製鍍低電阻率之 TNO 透明導電膜,最佳電阻率小於 5×10-4 Ω-cm,在光學特性的部分,可見光區最高穿透率可達到 85% 以上且吸收小於 10 %。 |
英文摘要 | Transparent conducting oxide (TCO) thin fi lms are the crucial materials and have been widely applied in various optoelectronic devices. Nb-doped anatase TiO2 (TNO) fi lms have development of a novel transparent conductive oxide and possess properties that Sn-doped In2O3 (ITO) does not have, such as high refractive index, high transmittance in the infrared region and high chemical stability. Low resistivity TNO transparent conducting oxide thin films have been achieved by the magnetron co-sputtering method. The resistivity was measured to lower than 5×10-4 Ω-cm and the average absorbance in the visible light region was smaller than 10%. |
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