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題 名 | 奈米級先進金屬氧化半導體(MOS)元件的有效通道導電性=The Effective Channel Conductance of Nano MOS Devices |
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作 者 | 黃恆盛; 黃啟聰; 陳信男; | 書刊名 | 臺北科技大學學報 |
卷 期 | 35:1 2002.03[民91.03] |
頁 次 | 頁1-8 |
分類號 | 448.552 |
關鍵詞 | 通道氧化層; 通道導電性; C-R方法; 有效通道長度; 短通道效應; Channel oxide; Channel conductance; ELJ model; C-R method; Effective channel length; L□; Short channel effect; Leff; |
語 文 | 中文(Chinese) |
中文摘要 | 在本文中,我們將以修正式的電容-電壓量測方法,考量源極/汲極延伸側邊接面效應來探討有效通道氧化層厚度模型。通道氧化層厚度,dox, eff(Leff)=εox/Cox, eff(Leff),將變成有效通道長度(Leff)的函數且不再是與元件尺寸無關。此外,我們也將在這篇文章中,詳細的探討Cox, ef或是dox, eff稍微受偏向電壓(Vgs or Vds)的影響。而在halo製程下(一種在源/汲極延伸區的下方,形成一和基底中摻雜類型相同但濃度較高的區域),元件有效遷移率的降低,µhalo(Leff),也將被討論。同時,我們也將首次提出在ELJ效應下的有效通道導電性單位因子,G(Leff)=µhalo(Leff) Cox, ef(Leff)的關係。最後,在0.13 µm製程技術下元件N/PMOS的G(Leff)之間差異也一併加以說明,以利未來奈米級元件開發之參考。 |
英文摘要 | In this paper, the effective channel oxide thickness model, considering the source/drain extension lateral junction effect (ELJ effect), is proposed and verified using a modified C-V method (C-R method). The channel oxide thickness, dox,eff (Leff)=εox/Cox,eff(Leff), becomes a function of effective channel length (Leff) and no longer independent of device size. Cox, eff or dox, eff is also slightly dependent on the bias voltage (Vgs or Vds), which is discussed in details in this paper. The effective mobility degradation of devices using the halo process, μhalo(Lef) is also discussed. The effective channel conductance unit factor G(Leff)= μhalo(Lef)Cox, eff(Leff), which considers the ELJ effect is proposed. The difference between the G(Leff) of N/PMOS devices, which is processed using 0.13 μm technology, is also discussed. |
本系統中英文摘要資訊取自各篇刊載內容。