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題 名 | Estimation of W-polycide Gated Process with Superior Device Behavior in Deep Sub-μm CMOS Technology=有較佳電氣特性之深次微米鎢複晶矽閘極場效電晶體製程 |
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作 者 | 陳啟文; 吳明瑞; | 書刊名 | 明新學報 |
卷 期 | 20 民87.05 |
頁 次 | 頁205-211 |
分類號 | 448.552 |
關鍵詞 | 深次微米; 鎢複晶矽閘極; 通道長度; 短通道效應; 場效電晶體; Deep sub-μm; W-polycide; Channel length; Short channel effect; CMOSFET; |
語 文 | 英文(English) |