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題 名 | An Analytical Threshold Voltage Model for Short-Channel Intrinsic-Type Silicon-on-insulator(SOI) P-Channel Metal-Oxide-Silicon (PMOS)Devices Based on Partitioning of Holes=根據電洞分割之可解析短通道純型在絕緣體上矽P型金氧半臨界電壓模型 |
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作 者 | 陳孝賢; 蘇哿暐; 郭正邦; | 書刊名 | 國立臺灣大學工程學刊 |
卷 期 | 66 1996.02[民85.02] |
頁 次 | 頁37-49 |
分類號 | 448.552 |
關鍵詞 | 臨界電壓; 絕緣體上矽; 金氧半; 短通道效應; Threshold voltage; Silicon-on-insulator; Metal-oxide-silicon; Short-channel effect; |
語 文 | 英文(English) |