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題 名 | 奈米範圍之場效電晶體臨界電壓對摻雜質濃度變異的敏感度=Threshold Voltage Dependence on Channel Doping for Nanoscale MOSFETs |
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作 者 | 林政男; 陳俊龍; 蒲佳輝; 賴亮林; 駱俊銘; 江孟學; | 書刊名 | 宜蘭大學工程學刊 |
卷 期 | 2 民95.02 |
頁 次 | 頁27-35 |
分類號 | 448.552 |
關鍵詞 | 臨界電壓; 摻雜濃度; 金氧半場效電晶體; Threshold voltage; Doping density; MOSFET; |
語 文 | 中文(Chinese) |
中文摘要 | 此論文主要探討摻雜濃度對臨界電壓敏感度的變異之關係,並將重點放在高度微縮下的金屬—氧化物—半導體場效電晶體,簡稱金氧半場效電晶體(MOSFET),並且探討其臨界電壓與摻雜濃度之間的關係是否依舊能緊密結合?如果這個答案是肯定的,未來在元件的設計上,我們很可能會面臨到準確控制臨界電壓的問題。因此,我們深入此問題,研究當MOSFET元件的閘極長度從次微米微縮至幾十奈米的範圍之下,臨界電壓對低到高摻雜濃度範圍下變化之關係。我們將根據所學的基礎學理之解析方程式來做臨界電壓在學理上的分析與探討,並且嘗試著預測在高度微縮下之MOSFET可能產生的問題。接著利用元件模擬程式以二維(2D)的元件架構加以模擬驗證。最後,將模擬數據結果與理論值來相互對照,分析兩者之間的差異處。最後將所得的相關數據加以整理,以提供元件設計者在奈米範圍下MOSFET之設計,能有一個參考的方向與準則。 |
英文摘要 | The threshold voltage dependence on channel doping for scaled MOSFETs is investigated. The physical insight to the impact of doping density fluctuation on device characteristics is analyzed via theoretic study and 2-D device simulation. Due to the progress of process technique, the device size has been scaled quite aggressively. Within the small volume of the transistor channel, even a small variation in the number of impurity atoms will bring a very significant impact to the effective doping density. If the classical relationship between threshold voltage and doping density continues to hold, controlling VT very precisely will remain as a challenging task and potentially become an obstacle in the future. In this paper, we reexamine the relationship between the threshold voltage and doping density for continuous device scaling. |
本系統中英文摘要資訊取自各篇刊載內容。