查詢結果分析
相關文獻
- The Effect of Doping Profile Variations upon Deep Submicrometer MOSFET's
- 奈米範圍之場效電晶體臨界電壓對摻雜質濃度變異的敏感度
- Characterization of Metal-Oxide-Semiconductor Field Effect Transistor for Polypyrrole Prepared by Electrochemical Synthesis
- 功率型金氧半場效電晶體並聯之研究
- 高功率金氧半場效電晶體製程技術及發展趨勢
- 分子束磊晶技術之Ga[feaf]O[feb0](Gd[feaf]O[feb0])新成長法--首次展現金氧半場效電晶體(MOSFET)
- MOSFET的基體效應分析
- 次微米互補型金氧半場效電晶體匹配特性與製程因子的研究
- Improved Performance and Reliability of MOSFETs with Ultrathin Gate Oxides Prepared by Novel Oxynitridation Technology
- 溝槽式功率金氧半場效電晶體元件密度與近似飽和現象之探討
頁籤選單縮合
| 題 名 | The Effect of Doping Profile Variations upon Deep Submicrometer MOSFET's=摻雜濃度分佈變化對深次微米金氧半場效電晶體的效應 |
|---|---|
| 作 者 | Brews,J. R.; | 書刊名 | Journal of the Chinese Institute of Electrical Engineering |
| 卷 期 | 2:1 1995.02[民84.02] |
| 頁 次 | 頁1-6 |
| 分類號 | 448.552 |
| 關鍵詞 | 摻雜濃度; 金氧半場效電晶體; Doping profile; MOSFET; |
| 語 文 | 英文(English) |