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頁籤選單縮合
題 名 | The Effect of Doping Profile Variations upon Deep Submicrometer MOSFET's=摻雜濃度分佈變化對深次微米金氧半場效電晶體的效應 |
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作 者 | Brews,J. R.; | 書刊名 | Journal of the Chinese Institute of Electrical Engineering |
卷 期 | 2:1 1995.02[民84.02] |
頁 次 | 頁1-6 |
分類號 | 448.552 |
關鍵詞 | 摻雜濃度; 金氧半場效電晶體; Doping profile; MOSFET; |
語 文 | 英文(English) |