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題名 | 次微米互補型金氧半場效電晶體匹配特性與製程因子的研究=On Matching Properties and Process Factor for Submicronmeter CMOS |
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作者姓名(中文) | 王是琦; 劉紹宗; 李宏達; 潘國華; | 書刊名 | 逢甲學報 |
卷期 | 31 1997.06[民86.06] |
頁次 | 頁171-179 |
分類號 | 448.552 |
關鍵詞 | 金氧半場效電晶體; 非匹配特性; MOSFET; Mismatch; |
語文 | 中文(Chinese) |
中文摘要 | 本篇論文旨在討論0.5微米互補型金氧半場效電晶體的匹配特性。我們對在較大 的閘極偏壓狀況之下,源極和汲極寄生電阻(parasitic resistance)對短通道元件的非匹配特 性的影響進行了研究。在作匹配特性統計分析時,我們發現製程梯度(process gradients) 所 產生的長間距(long-spacing) 非匹配特性與短間距(short-spacing) 非匹配特性有 顯著的不同。由於區域邊緣變化(local edge variations) 效應使得臨界電壓非匹配與(WL 0.75)成比例關係。此外,我們發現n0.5定律模型可用來模擬條狀佈局(stripe-layout) 的非匹 配特性。 |
英文摘要 | Matching property of a 0.5um CMOS process is investigated. Short channel effect in matching is studied by incorporating source and drain parasitic resistance, which contributes significantly to high-gate-bias mismatch. In characterizing matching statistics, it is found that long-spacing mismatch, due to process gradients, differs considerably from short-spacing mismatch. Threshold voltage mismatch is proportional to (WL0.75) due to local edge variations. In addition, a n0.5 -law model is developed to model the stripe-layout mismatch. |
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