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題名 | A Cmos Surface Micromachined Pressure Sensor=CMOS表面微細加工的壓力計 |
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作者 | 戴慶良; 張培仁; Dai, Ching-liang; Chang, Pei-zen; |
期刊 | 中國工程學刊 |
出版日期 | 19990500 |
卷期 | 22:3 1999.05[民88.05] |
頁次 | 頁375-380 |
分類號 | 471.3 |
語文 | eng |
關鍵詞 | 互補式金氧半導體; 電容式; 壓力計; CMOS; Capacitive; Pressure sensor; |
中文摘要 | 利用工業標準0.8μm CMOS製程製作完成電容式壓力計。此壓力計完全遵照CMOS 積體電路的設計規則,進行佈局和設計。此電容式壓力計的感測電容是由CMOS薄膜層的上 金屬層(Metal 2 layer)和多晶矽層(Polysilicon layer)所組成。而以下金屬層(Metal 1 layer)作為犧牲層。在完成標準CMOS製程後,需要進行三道後製程處理、才能完成此電容 式壓力計。此三道後製程分別為:(1)以磷酸蝕刻犧牲層,獲得電容式壓力計所需之薄膜。(2) 利用電漿化學沈積法沈積氮化矽封住壓力計上之蝕刻孔。(3)以反應離子蝕刻術去除壓力計 薄膜上之氮化矽。電容式壓力計的總面積為1.0*0.9mm□,其線性操作範圍為0-200kPa,靈 敏度為0.07mV/kPa。 |
英文摘要 | A capacitive pressure sensor has been implemented by the industrial standard 0.8μm CMOS (Complementary metal oxide semiconductor) process. The device layout follows the entire set of CMOS IC (Integrated circuit) design rules. The sensing capacitor of the capacitive pressure sensor is composed of the upper metal (metal 2) and the polysilicon layer. The lower metal layer (metal 1) serves as the sacrificial layer. After completing the standard CMOS process, three CMOS-compatible post- processing steps were applied. First, phosphoric acid was used to etch the sacrificial layer to release the membrane of the capacitive pressure sensor. Second, PECVD (Plasma enhanced chemical vapor deposition) nitride was utilized to seal all access holes. Finally, RIE (Reaction ion etching) was used to remove nitride on the membrane. The dimensions of the capacitive pressure sensor are 1.0mm*0.9mm. This pressure sensor operates linearly in the range of 0-200kPa, and the sensitivity is 0.07mV/kPa. |
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