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題 名 | 光阻劑中之酸擴散效應=The Acid Diffusion in Photoresist |
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作 者 | 賴榮豊; 張瑞發; 陳建宏; | 書刊名 | 觸媒與製程 |
卷 期 | 6:4 1999.01[民88.01] |
頁 次 | 頁1-9 |
專 輯 | 觸媒專輯 |
分類號 | 460.047 |
關鍵詞 | 光酸發生劑; 樹脂; 光罩; 微影; |
語 文 | 中文(Chinese) |
中文摘要 | 在半導體工業上微影製程( microlithography process)(圖一)可說是非常重 要的一環,可將光罩( mask )上之圖案移轉至矽晶圓上( wafer )。 而光阻又是圖案移 轉過程所用到一種不可或缺的化學物質, 大致上光阻可分為樹脂( resin )、光酸發生劑 ( photoacid generator )、以及其它添加劑等等。 由於微影製程愈來愈精細,所用的光 阻也隨著變化。 由以往之 Novolak 光阻系統演變至 Deep UV 化學增幅系統( chemically amplified system )因此之故光阻成份中之光酸發生劑曝光後所產生之酸分子, 也隨著系 統之改變而顯得重要。本文將約略介紹 Novolak 光阻系統及 Deep UV 化學增幅系統,並說 明何以酸分子之擴散作用在 Deep UV 化學增幅系統中其影響性如此之深, 可以關聯到影像 之成功與否以及為了克服酸分子之擴散作用所引起的影響所採取的補救方法。 |
英文摘要 | The microlithography is one of the important processes in the IC industry, which can transfer the image of the mask to the silicon wafer, and the photoresist is also an inevitably chemical material for this purpose. Generally speaking the photoresist consists of resin, photoacid generator and possibly other additives. Because the critical dimension of the image is much more and more dense, the photoresists used in the IC industry vary from time to time -- from traditional Novolak system to deep UV chemically amplified system. Therefore the acid molecules produced after the h υ irradiation become more and more important. This article will briefly describe the Novolak and Deep UV photoresist systems, respectively and explain why the acid molecules possess so influential impact for the image patterning in the deep UV photoresist system. Actually the acid molecules in the deep UV system may affect the image transferring process whether to be successful or not. Also in order to reduce the influence from diffusion of the acid molecules, several methods adopted in the IC industry will be described. |
本系統中英文摘要資訊取自各篇刊載內容。