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題名 | AlN Films Deposited by RF Magnetron Sputtering Techniques=以濺射法探討氮化鋁多層基板之研製 |
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作者 | 顏伯甫; 陳冠能; 吳南均; Yen, Po-fu; Chen, Kuan-neng; Wu, Nan-chung; |
期刊 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
出版日期 | 19980300 |
卷期 | 22:2 1998.03[民87.03] |
頁次 | 頁225-234 |
分類號 | 448.5 |
語文 | eng |
關鍵詞 | 封裝基板材料; 射頻磁控濺射法; 氮化鋁薄膜; AlN; R.F. magnetron sputtering; C-axis preferred orientation; |
中文摘要 | 本研究使用射頻磁控濺射法,分別以氮化鋁靶、鋁靶為靶材,通入氬氣與氮氣 之混合氣體,在汐晶片及玻璃基板上沈積氮化鋁薄膜。並藉由改變射頻功率、工作壓力、 氮氬濃度比,以獲得高結晶品質之C軸優先取向之氮化鋁薄膜,使其對未來製作封裝基板 材料時能有所助益。 |
英文摘要 | AIN thin films on silicon and glass substrates were prepared using an r.f. (radio frequency) magnetron sputtering technique. Films were deposited by sputtering from either an AI or an AIN target. The experimental results indicated that the optimum sputtering conditions were a chamber pressure of 3 mTorr. N□/Ar ratios of 0.15 (for AIN target) and 0.5 (for A1 target), an r.f. power of 400 W or more and substrate at room temperature. The deposition rate of film, when the r.f. power was set at 400 W, was 28-32 nm/min using the A1 target and 38-42 nm/min using the AIN target. The AIN film was found to have excellent surface flatness, an AIIN atomic ratio close to 1, and a C-axis preferred orientation. SEM observations showed that columnar -rains existed in the AIN film. The electric resistivity and the specific dielectric constant of the AIN thin film were 10□-10□ Ω-cm and 10 from I-V and C-V curves, respectively. |
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