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題 名 | Growth of Highly C-Axis Oriented Aluminum Nitride thin Films on SiO[feaf]/Si(100)=在SiO[feaf]/Si(100)基板上成長高C軸排向氮化鋁薄膜 |
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作 者 | 鄭建銓; | 書刊名 | 四海學報 |
卷 期 | 10 1996.01[民85.01] |
頁 次 | 頁71-80 |
分類號 | 468.6 |
關鍵詞 | C軸排向; 氮化鋁; 磁控射頻濺鍍; X光繞射儀; 優先取向; C-axis oriented; Aluminum nitride; Reactive RF magnetron sputtering; X-ray diffraction; Preferred orientation; |
語 文 | 英文(English) |
中文摘要 | 使用磁控射頻濺鍍法成功的在二氧化矽覆膜之矽基板上沈積高C軸排向氮化鋁薄膜;薄膜結構的特性取決於x光繞射儀,同時與沈積條件有密切的關係。實驗的結果顯示,在基板溫度低於450℃時,優先取向之氮化鋁(002)峰值可被獲得;同時,此優先取向之氮化鋁(002)峰值傾向於隨著RF功率或氮氣濃度之增加而增強;除此之外,對於濺鍍壓力而言,存在一個較適佳的範圍約7.5∼15m Torr,可得到高C軸排向之氮化鋁薄膜。 |
英文摘要 | Highly c-axis oriented aluininuin niti'ide (AIN) thin films have been successfully deposited on SiOy coated Si (100) substrates by reactive RF magnetron sputtering. The structural characterizations determined by X-ray diffraction (XRD) measurement are found to be sensitive to the deposition conditions. A strong AIN (002) preferred orientation perpendicular to the substrate surface can be identified at a substrate temperature of less than 450℃--Meanwhile, the crystallization of AIN thin film with(002) preferred orientation tends to be improved with increased RF power and/or nitrogen concentration. Besides, an optimal sputtering pressure of 7.5∼15 mTorr exists for the growth of (002) preferred orientation. |
本系統中英文摘要資訊取自各篇刊載內容。