查詢結果分析
來源資料
頁籤選單縮合
題名 | 各式記憶體簡介=The Introduction of Memory Device |
---|---|
作者 | 李明道; | 書刊名 | 奈米通訊 |
卷期 | 22:4 2015.12[民104.12] |
頁次 | 頁1-6 |
分類號 | 448.57 |
關鍵詞 | 動態隨機存取記憶體; 靜態隨機存取記憶體; 快閃記憶體; 非揮發性記憶體; 電荷儲存式快閃記憶體; 磁阻式記憶體; 相變化記憶體; 電阻式記憶體; DRAM; SRAM; Flash; NVM; CTF; MRAM; PCRAM; RRAM; |
語文 | 中文(Chinese) |
中文摘要 | 記憶儲存元件在電腦工業上一直扮演著很重要的角色,在科技的進步過程中有些元件達成階段性任務而光榮引退,有些元件則一直保有其重要地位沒有因為科技的進步而被淘汰;而有些元件卻是歷久彌新,不但保有其自身的地位而且漸漸蠶食其他元件的生存空間。本文將以記憶體為主題,介紹動態隨機存取記憶體 (Dynamic RAM, DRAM)、靜態隨機存取記憶體 (Static RAM, SRAM)以及快閃記憶體 (Flash)等傳統記憶體元件,還說明磁阻式記憶體 (MRAM)、相變化記憶體 (PCRAM)以及電阻式記憶體 (RRAM)等新式記憶體元件之特性,闡述這些記憶儲體元件的發展過程及其自身之優劣缺失,讓讀者對記憶體元件有個概括性的認識。 |
英文摘要 | The memory storage element has been playing a very important role in computer industry. Some devices were replaced due to the improvement of technology. Other devices maintained their important position because of their advances in technology. And the other device not only maintained its position but also replaced other devices in computer application. In this report, we focus on the memory devices introducing Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), Flash memory (Flash), Magnetoresistive Random Access Memory (MRAM), Phase Change Random Access Memory (PCRAM) and Resistive Random Access memory (RRAM). Moreover, we will describe their characteristics as following to give readers a picture of memory technology. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。