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題 名 | 摻雜鋅之二氧化矽電阻式記憶體=Zn-doped Silicon Dioxide Resistance Random Access Memory |
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作 者 | 張鼎張; 蔡宗鳴; 張冠張; 朱天健; 徐詠恩; 楊台發; 陳榮輝; | 書刊名 | 奈米通訊 |
卷 期 | 20:1 2013.03[民102.03] |
頁 次 | 頁2-11 |
分類號 | 471.6511 |
關鍵詞 | 電阻式記憶體; 非揮發性; 二氧化矽; 電阻切換特性; 超臨界流體; RRAM; Nonvolatile; Silicon oxide; Resistive switching; SCCO₂; SiO₂; |
語 文 | 中文(Chinese) |
中文摘要 | 在新穎次世代記憶體元件中,電阻式記憶體( Resistance Random Access Memory : RRAM)因具有操作速度快、結構簡單、非揮發性、低功耗與可靠度佳等優點,使其成為最具潛力的次世代數位訊息存儲器,目前是十分熱門的研究課題。由於其電阻切換機制與材料選定上還未有定論,所以許多研究均探討各式材料應用於 RRAM之穩定性與可行性,並且對其電阻切換機制之物理模型亦有多種解釋與研究。由於二氧化矽( SiO2)本身化學特質安定,在半導體工業上被廣泛應用於電子元件的絕緣層與保護層,所以常見於矽基半導體 IC工業。本研究指出,雖然純質二氧化矽( SiO2)材料不具有電阻切換的特性,但在微量金屬摻雜後的( SiO2)薄膜卻會因摻雜金屬而導致其具有電阻切換特性。由於二氧化矽( SiO2)為半導體廠接受並常用之材料,在製程整合上具有高度的相容性與實用性,本研究之矽基電阻式記憶體因其與 IC製程相容性高而有研究價值與前瞻性。此外本研究提出之低溫薄膜處理方法(超臨界流體)可進一步應用於 IC後段製程,並且經處理後之元件操作電流可以有效地降低,進而減少功率消耗,這對於元件的高密度集結,是非常有幫助的。 |
英文摘要 | Among the next-generation memory devices, resistance random access memory (RRAM) is a promising candidate for the applications on digital storage system due to its simple cell structure, low power consumption, high operating speed, and nondestructive readout. Therefore, the research of RRAM devices is a hot topic in the academia. Because the underlying mechanism of resistive switching behavior is still not understood clearly, many researches of RRAM focus on the physical models of resistive switching behaviors and its reliability and feasibility of nonvolatile memory properties for various materials. Silicon dioxide is a promising material for integrated circuits (IC) process due to its great chemical stability. In thisstudy, although the pure SiO2 material didn’t reveal the resistive switching behaviors, the bipolar switching characteristics of silicon based material can be obtained through light metal doped in the SiO2 by co-sputtering technology. Therefore, the research using silicon-based oxide as the resistance-switching layer was worthy of investigation due to its high compatibility in IC fabrication for semiconductor industries. In addition, we proposed a novel supercritical CO2 fluid (SCCO2) treatment method on the silicon based Zn-doped (Zn:SiO2) RRAM for the application in back-end of line (BEOL) of IC process. It was found that the operation current of Zn:SiO2 RRAM can be reduced to decrease the power consumption and heating degradation of RRAM devices through the SCCO2 treatment technology. We believe that the method is useful to raise device density of IC product. |
本系統中英文摘要資訊取自各篇刊載內容。