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題 名 | Formation of Silicon Dioxide Film on Gallium Arsenide by Deposition Method in Liquid Phase at Very Low Temperature=於低溫下二氧化矽膜在砷化鎵的形成藉著液相沉積法 |
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作 者 | 黃建榮; 賴新喜; 陳世芳; | 書刊名 | 和春學報 |
卷 期 | 5 1998.07[民87.07] |
頁 次 | 頁1-5 |
分類號 | 440.33 |
關鍵詞 | 二氧化矽膜; 砷化鎵; 液相沉積法; |
語 文 | 英文(English) |
中文摘要 | 一個高品質且高穩定度的二氧化矽膜藉由液相沉積法、在低溫下成長於砷化鎵基板 已被研發了。這二氧化矽膜之成長速率與折射率分別為1265 �o/hr及1.42。這謨之可靠度(具 有較低的電荷密度)能增加應用在超大積體電路之潛力。我們相信這成長現象是歸因於在沉 積二氧化矽之前基板表面有被化學修飾過。 |
英文摘要 | A high quality and stability silicon dioxide(SiO�砥^film grown on Gallium arsenide(GaAs)substrate by liquid phase deposition (LPD)method at extremely low temperature has been developed and stuided. The maximum growth rate and refractive index of silicon dioxide of 1265 �o/hr and 1.42 are obtained, respectively. The good reliability of films which possess lower charge density(∼3.7×10�楚^can increase the application potentialities in Ultra Large Scalar Integral(ULSI). We believe that the growth phenomena are attributed to the chemical modification of the substrate surface before the substrate immersing into the growth solution. |
本系統中英文摘要資訊取自各篇刊載內容。