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| 題 名 | A Low Temperature Improved Formation of Silicon Dioxide Films in Liquid Phase Deposition=以液相沉積法在低溫狀態下改善二氧化矽膜的形成 |
|---|---|
| 作 者 | 黃建榮; 鄧文榮; | 書刊名 | 和春學報 |
| 卷 期 | 4 1997.07[民86.07] |
| 頁 次 | 頁19-24 |
| 分類號 | 440.33 |
| 關鍵詞 | 液相沉積法; 低溫; 二氧化矽膜; Liquid phase deposition; Deposition rate; Silicon dioxide film; Formation; |
| 語 文 | 英文(English) |
| 英文摘要 | 此論文的目地是將顯現增加二氧化矽膜沉積率,正如所知、在低溫下若無OH�珙O 很難沉積的,所以、在沉積前的晶片處理是非常重要,表面浸入 HF 中可產生 Si-H 鍵以便 與水反應產生 Si-OH 鍵,因此一成長機制在超純水有豐富 OH 分子以便長二氧化矽, 事實 上、在相同的硼酸之下、有與水反應的比沒與水反應的二氧化矽沉積率大約 90A ° /hr 且 得非常好的品質。 ted with hydrogen (H) and have hydrides (Si-H) to react with water so that hydroxyls (Si-OH) can be made of. While no oxide can be grow on a clean Si substrate without native oxide. Therefore, a model will be shown that native oxide growth in ultrapure water have rich hydroxyl (OH) molecules in surface in order to grow silicon dioxide. In effect, the corresponding growth rate of SiO �� is about 90 A °per hour larger than that of wihtout reacting with water at the same concentration of boric acid and obtain good quality. |
本系統中英文摘要資訊取自各篇刊載內容。