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題 名 | Effect of Oxidation Pressure on the Characteristics of Fluorinated Thin Gate Oxides Prepared by Room Temperature Deposition Followed by Rapid Thermal Oxidation=快速熱氧化壓力對室溫液相沉積並快速熱氧化處理所備製之含氟氧化層特性之影響 |
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作 者 | 葉國良; 鄭明哲; 胡振國; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷 期 | 22:4 1998.07[民87.07] |
頁 次 | 頁539-545 |
分類號 | 448.532 |
關鍵詞 | 室溫液相沉積法; 快速熱氧化處理; 氟; 氧化層; Liquid phase deposition; LPD; Rapid thermal oxidation; RTO; Time-zero dielectric breakdown; TZDB; Charge-to-breakdown; Q ; Oxide breakdown field; E; |
語 文 | 英文(English) |
中文摘要 | 本文是研究以室溫液相沉積法後經快速熱氧化處理所備製之含氟薄氧化層的特 性。實驗是以二種快速熱氧化壓力來進行,即大氣壓力(760torr)及低壓(600torr)。從實驗 得知較佳的室溫液相沉積經快速熱大氣壓力氧化處理所成長之薄氧化層,具有增加氧化層之 電荷累積崩潰特性但卻降低其崩潰電場。但是若降低快速熱氧化壓力時,其所成長之氧化層 不但可增加氧化層的電荷累積崩潰特性,亦可增強其崩潰電場。歸究其原因可能是由於在薄 氧化層之零時間崩潰電場測試時,氧化層內固定電荷的分佈將扮演一個重要角色。另外,亦 發現液相沉積的時間及之後快速熱氧化的壓力及時間,可用來控制薄氧化層內氟的含量及電 荷的分佈情形。 |
英文摘要 | Room temperature liquid phase deposition (LPD) followed by rapid thermal oxidation (RTO) was used to prepare thin fluorinated oxides (LPD/RTO). Both atmosphere (760 tort) and low pressure (600 tort) rapid thermal oxidation, i.e., ARTO and LRTO, respectively, were examined. It was found that the best LPD/ARTO oxide exhibited enhanced charge-to breakdown QBD but degraded oxide breakdown field EBD. However, when the oxidation pressure was reduced, the best LPD/LRTO oxide exhibited improved characteristics in both QBD and EBD. It is supposed that the fixed oxide charge distribution in thin oxides plays an important role in characterizing the time-zero dielectric breakdown (TZDB) behavior. Furthermore, both the LPD time and the following RTO pressure and time can be used to control the fluorine content or the charge distribution in LPD/RTO oxides. |
本系統中英文摘要資訊取自各篇刊載內容。