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題 名 | 非晶形矽氫薄膜中載子傳導之探討=Study on the Charge Transport in the Hydrogenated Amorphous Silicon Thin Films |
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作 者 | 周榮泉; 鄭朝雲; 楊淑英; | 書刊名 | 材料科學 |
卷 期 | 31:2 1999.06[民88.06] |
頁 次 | 頁107-114 |
分類號 | 440.33 |
關鍵詞 | 非晶形矽氫; 光激放電分析法; 表面充電電位放電率; 載子遷移率; 多重捕陷模式; Hydrogenated amorphous silicon; Electrophotography; Surface charging potential; Carrier mobility; Multiple trapping model; |
語 文 | 中文(Chinese) |
中文摘要 | 非晶形矽氫材料為目前高速影印機感光體重要材料,本論文為了對此種感光體材 料的基 本物理特性有更深入的認識,我們以非晶形矽氫(a-Si:H)材料,利用PE-LPCVD法,備製非 晶形矽氫薄膜。再利用光激放電分析法(Electrophotography)來探討載子在非晶形矽氫薄膜 中的傳導機制。 以靜電帶電試驗分析儀(Electrostatic paper Analyser, Model EPA8100)量測已備製完 成的非晶形矽氫薄膜之最初表面充電電位放電率與最後表面充電電位放電率,經實驗結果得 知載子遷移率會隨電場和薄膜厚度而變。由上述結果亦可得知非晶形矽氫薄膜中載子傳導之 方式,並嘗試以多重捕陷模式(Multiple Trapping Model)加以解釋,以建立合理之模型。 |
英文摘要 | The hydrogenated amorphous silicon (a-Si:H) material is very important material for photoreceptors used in the xerography. In this paper in order to study the fundamental properties of the hydrogenated amorphous silicon material for photoreceptors, the thin films of a-Si:H were prepared by plasma enhanced chemical vapor deposition system. The charge transport in the hydrogenated amorphous silicon thin films was studied by the electrophotography measurement. The initial surface charging potential and final surface charging potential of the hydrogenated amorphous silicon material were examined by using the Electrostatic Paper Analyzer (Model EPA8100). From the experimental results, we found that the carrier mobility is dependent on the electric field and thickness of the thin films. These results show that we can understand the mechanism of the charge transport in the hydrogenated amorphous silicon thin films. In addition, the multiple trapping model can be used to explain the charge transport. |
本系統中英文摘要資訊取自各篇刊載內容。