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題 名 | Doping Properties of Pr[feaf]O[feb0]Associate InGaAs Epitaxy=三氧化二鐠在砷化鎵磊晶層中之參雜特性 |
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作 者 | 劉正中; 張連璧; 鄭益昌; | 書刊名 | 中正嶺學報 |
卷 期 | 25:2 1997.01[民86.01] |
頁 次 | 頁187-193 |
分類號 | 448.552 |
關鍵詞 | 砷化銦鎵; 三氧化二鐠; 雜質濃度; 載子遷移率; 光激瑩光; GaAs; Pr[feaf]O[feb0]; Impurity concentration; Carrier mobility; Photoluminescence; |
語 文 | 英文(English) |
中文摘要 | 本研究將砷化銦鎵磊晶層,生長在半絕緣磷化銦基底上。在磊晶生長過程之中, 參入三氧化二鐠。結果發現參入三氧化二鐠之砷化銦鎵磊晶層的表面相當平整,且結晶良好 ,無需預烤就可得到降低背景雜質濃度,與提高載子遷移率之效果。從光激瑩光之數據,也 顯示有較強之比值,進而支持上述電性量測的結果。 |
英文摘要 | InGaAs epilayers were grown on the semi-insulating(SI) InP substrates by liquid phase epitaxy(LPE) with a rare-earth(RE) compound Pr �� O �� doped into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystalline quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of those InGaAs grown layers will decrease from a value of 1.6 × 10 �B to 2.0 × 10 �� cm. Their correspondent 77 K mobility also significantly increases from a value of 15321 to 32171 cm �� /V-s. The photoluminescence(PL) spectra of Pr �� O �� doped InGaAs epilayers display strong intensity ratios for the band to impurity peak, which also demonstrates that the grown layers exhibit pure crystalline quality. |
本系統中英文摘要資訊取自各篇刊載內容。