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題名 | Photoreflectance Characterization of Strained (111)B InGaAs/GaAs Quantum Well p-i-n Diode Structures=光調制反射光譜術對受應力之(111)B砷化銦鎵/砷化鎵量子井p-i-n二極體結構之特性探討 |
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作者 | 陳堯輝; Chen, Y. H.; |
期刊 | 臺北科技大學學報 |
出版日期 | 19980300 |
卷期 | 31:1 1998.03[民87.03] |
頁次 | 頁47-53 |
分類號 | 343.16 |
語文 | eng |
關鍵詞 | 光調制反射光譜術; 應力; (111)B砷化銦鎵/砷化鎵量子井p-i-n二極體結構; |
中文摘要 | 在室溫時,利用光調制反射光譜術探究一系列之(111)B砷化銦錠/砷化 錠量子井p-i-n結構。期砷化銦錠所含的銦之莫耳成份為0.2。經由實驗觀 察所得:當量子井之數目增加時,呈現在砷化鎵能隙值之上的Franz- Keldysh振盪週期亦相對增加;可直接求得砷化銦鎵因應力而產生之壓電電 場值。由此一電場值,成分為0.2之砷化銦鎵之壓電係數,e�洏i精確求得。此 一數值較一般用二元化合物,砷化鎵及砷化銦,之參數內插所求得之數值為小。 |
英文摘要 | A series of (111)B InGaAs/GaAs quantum well p-i-n structures have been investigated via room temperature photoreflectance spectroscopy. The norminal indium mole fraction was 0.2. Evolution of the experimental increased periods of the Franz-Keldysh oscillations above energy gap of GaAs, With the increased number of quantum well, the piezoelectric fields can be deduced directly. This allowed us to obtain precise information about the piezoelectric constant, e14, for this indium compositions. For the x composition investigated, we have found e�� is significantly lower than predicted by a simple linear interpolation of the accepted values for GaAs and InAs. |
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