查詢結果分析
相關文獻
- Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transitors with Various Spacer Thickness
- Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transistor with A 300 単 Spacer
- Determining Energy-Band Offsets of InAlAs/InGaAs Heterostructure Using Only Photoreflactance Data
- Photoreflectance Characterization of an InAlAs/InGaAs Heterostructure Bipolar Transistor
- Photoreflectance Characterization of Strained (111)B InGaAs/GaAs Quantum Well p-i-n Diode Structures
- Room-temperature Photoreflectance as an Efficient Toll for Growth Studies of InAIGaAs on InP by Molecular Beam Epitaxy
- 光調制反射光譜在半導體上的應用
- Direct Determination of Fermi Level Pinning by the Amplitude of Photoreflectance Spectra
- Carrier Concentration Determinated by Photoreflectance
- Design and Implementation of a 2.4 GHz One-Stage Amplifier Using Multi-Emitter Heterojunction Bipolar Transistors
頁籤選單縮合
題名 | Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transitors with Various Spacer Thickness=應用光調制反射光譜探討間隔層厚度對砷化銦鋁/砷化銦鎵異質接面雙極性電晶體之影響 |
---|---|
作 者 | 陳堯輝; | 書刊名 | 臺北技術學院學報 |
卷期 | 29:1 1996.03[民85.03] |
頁次 | 頁15-25 |
分類號 | 448.552 |
關鍵詞 | 光調制; 反射光譜; 間隔層厚度; 砷化銦鋁; 砷化銦鎵; 異質; 雙極性電晶體; |
語文 | 英文(English) |
中文摘要 | 應用光調制反射光譜術探討砷化銦鋁/砷化銦鎵異質接面雙極性電晶體之內部細微 結構。由光調制反射光譜在砷化銦鋁能隙值以上所呈現之振燙,可推導射極介面的內建電場 ,進而計算出射極和間隔層接面之能障高度。 |
英文摘要 | Using contactless photoreflectance at room temperature InAlAs/InGaAs heterojunction bipolar transistors with different spacer thickness inserted between emitter and base grown by molecular beam epitaxy has been characterized. The spectra from the emitter portion which occur Franz-Keldysh oscillations was utilized to deduce built-in voltage of emitter side and the spike of emitterbase interface can be obtained. The deduced height of spike was a very importmant parameter of the heterojunction bipolar transistors because it will suppress the thermionic emission of electron from emitter to base and cause the offset voltage increased. The inserted spacer will reduce the spike in interface. This article demonstrates that a nondestructive optical method can be used to characterize a real device. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。