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題名 | Carrier Concentration Determinated by Photoreflectance=以光調制反射光譜術決定載子濃度 |
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作者 | 陳堯輝; | 書刊名 | 臺北科技大學學報 |
卷期 | 32:1 1999.03[民88.03] |
頁次 | 頁9-15 |
分類號 | 343.16 |
關鍵詞 | 光調制反射光譜術; 載子濃度; Photoreflectance; PR; |
語文 | 英文(English) |
中文摘要 | 室溫時,以矽為n型雜質參雜,而載子濃度介於.5 X 1014 到 1.1 X 1018 cm-3之 一系列砷化鎵式樣;針對其在最低能隙之躍遷(約為1.42 eV)光調制反射光譜譜型之反應 加以探究。此最低能隙躍遷之光調制反射光譜,譜型之寬(Γ)經由實驗分析得到與載子濃 度呈0.6次方之正比函數關係。此一函數關係,可提供一非接觸性的載子濃度量測方法。 |
英文摘要 | Room tempe rature photoreflectance (PR) response at the E0 (≒1.42 eV) transition of n-type GaAs doped with Si was investigated within the free-carrier concentration (N) range of 2.5 X 1014 to 1.1 X 1018 cm-3. I find that Γ, the broadening parameter of the E0 structure increases with the measured N with the N0.6 law. This relation could be employed as a contactless means of determining carrier concentration. |
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