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題 名 | Determining Energy-Band Offsets of InAlAs/InGaAs Heterostructure Using Only Photoreflactance Data=光調制反射光譜術在量測砷化銦鋁/砷化銦鎵異質接面不連續性之應用 |
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作 者 | 陳堯輝; | 書刊名 | 臺北技術學院學報 |
卷 期 | 28:2 1995.07[民84.07] |
頁 次 | 頁1-15 |
分類號 | 343.16 |
關鍵詞 | 光調制反射光譜術; 砷化銦鋁; 砷化銦鎵; 異質接面; |
語 文 | 英文(English) |
中文摘要 | 應用光調制反射光譜術量測神化鋼鋁/神化鍋鏤異質接面.此異質接面 導電帶之不連續的能值可利用光譜量得之射極介面電場及堆積在間隔層之二維 電子氣及價電帶之光學躍遷來求得.神化銅鋁/神化鋼錶異質接面導電帶之不連 續的能值和兩異質材料之能隙差的比值由本實驗測得約為70. |
英文摘要 | In0.52Al0.48s/In0.53Ga0.47 heterojunction was characterized by photoreflectance. The energy-band discontinuity can be deduced from the built- involtage at InAIAs portion and the transition between valence band and theFermi edge of two-dimensional electron gas accumulated at the InGaAs portion. The result shows that the conduction-band offset retio, Qc, is about70 . |
本系統中英文摘要資訊取自各篇刊載內容。