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題 名 | Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transistor with A 300 単 Spacer=300埃間隔層砷化銦鋁/砷化銦鎵異質接面電晶體之光調制反射光譜研究 |
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作 者 | 陳堯輝; | 書刊名 | 臺北技術學院學報 |
卷 期 | 28:1 1995.03[民84.03] |
頁 次 | 頁33-46 |
分類號 | 343.16 |
關鍵詞 | 砷化銦鋁; 砷化銦鎵; 異質接面; 電晶體; 光調制反射光譜; |
語 文 | 英文(English) |
中文摘要 | 利用光調制反射光譜術對具有300埃間隔層砷化銦鋁/砷化銦鎵異質接 面電晶體做一內部細微結構之光譜研究:電晶體三元組成之成份,接面之內建電 場,以及堆積在間隔層之二維電子氣等有關影響電晶體整體外在電學特性之重要 內部參數皆可直接測得. |
英文摘要 | Using contactless photoreflectance at. room teinperature a InAlAs/1nGaAs heterojunction bipolar tranisistor with 300 Aspacer inserted between eniiltcr andbase grown by molecular beam epitaxy lias been characterized. Tlie spectra.from the lriAIAs a.nd InGaAs interface ca.n be accounted for on the basis of atriangular potential well which confined two-dimensiona.l electron gas. A detailed lineshape fit makes it possible to evalua.te the Fermi energy, and hencethe two-dimensional electron gas concentration. Furthermore, other imiportantparameters of the system such as built-in electric fields arid In composition canbe evaluated. |
本系統中英文摘要資訊取自各篇刊載內容。