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題名 | Electrical Properties of Microwave Communication Devices=微波通訊元件之電特性研究 |
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作 者 | 楊誌欽; | 書刊名 | 澎專學報 |
卷期 | 2 1998.07[民87.07] |
頁次 | 頁123-135 |
分類號 | 448.533 |
關鍵詞 | 砷化銦; 微波; 電阻係數; 導電係數; InAs; Microwave; Resistivity; Conductivity; |
語文 | 英文(English) |
中文摘要 | 砷化銦/砷化鎵異質介面共振微波通訊元件已成功的被製造,元件經繞射分析及光 頻譜測量證實特性良好,此文中研究該通訊元件之電特性受矽摻雜濃度及砷化銦V/III比影 響,其中電特性含元件之霍爾載子濃度、霍爾載子移動率、元件電導係數及元件電阻係數, 經研究結果發現元件之載子濃度與載子移動率變化與理論值分析相似,且經本研究計算出之 元件電導係數與元件電阻係數值隨砷化銦V/III比之變化具有相當的穩定性,另元件電導數 與元件電阻係數值亦隨矽摻雜濃度呈高變化率之正常現象,由以上之結果可知本文中得到砷 化銦/砷化鎵異質介面共振微波通訊元件之良好特性與分析。 |
英文摘要 | InAs/GaAs heterostructure grown by metal organic chemical vapour deposition (MOCVD) on n□-GaAs substrate is reported. The quality of InAs/GaAs hetero structure was already judged by x-ray diffraction and photoluminescence spectrum measurements. The growth of InAs by MOCVD growth using AsH3 and TMIn is also stated. Based on the systematic experiments, the dependence of electronic characteristics upon V/Ill ratio and doping condition are studied. |
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