頁籤選單縮合
題 名 | S-Band and X-Band Monolithic Microwave Amplifier Design Using Pseudomorhic AlGaAs/In匃Ga0.85As High Electron Mobility Transistors (HEMTs)=利用砷化鋁鎵/砷化銦鎵高速場效應電晶體設計S-頻帶及X-頻帶之微波積體放大器 |
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作 者 | 顏天霖; 詹益仁; 吳家松; | 書刊名 | Journal of the Chinese Institute of Electrical Engineering |
卷 期 | 2:4 1995.11[民84.11] |
頁 次 | 頁299-305 |
分類號 | 448.552 |
關鍵詞 | 砷化鋁鎵/砷化銦鎵; 高速場效電晶體; 單晶微波放大器; AlGaAs/InGaAs; HEMT; Monolithic amplifier; |
語 文 | 英文(English) |
中文摘要 | AlGaAs/In Ca AS高速場效電晶體經由直流及高頻的量測,其直流電導增益達 230mS/mm,高頻電流增益截止頻率達 130 億赫茲,功率增益截止頻率達到 370 億赫茲。利 用量測的微波 S-- 參數,我們建立了此元件的等效電路模型。我們並設計了一雙級 X-- 頻 帶和一單級 S-- 頻帶之放大器,其中包含了高速場效應電晶體及匹配與偏壓網路, 以達到 合理的增益及輸入與輸出的反射損失。這些單晶微波放大器是個人無線通訊及衛星通訊的關 鍵性零組件。 |
英文摘要 | AlGaAs/In Ca As High Electron Mobility Transistors (HEMTs)were evaluated through DC and RF testings, and demonstrated a peak g �o of 230 mS/mm, an f of 13 GHz, and an f of 37 GHz. Device equivalent circuit models were established based on the measured microwave S-parameters. A two-stage X-band amplifier and a one-stage S-band amplifier were designed, including HEMTs and matching, biasing networks, to achieve a considerable gain together with the low input and output return loss. These monolithic amplifiers are the key components for personal wireless and satellite communication systems. |
本系統中英文摘要資訊取自各篇刊載內容。