查詢結果分析
來源資料
相關文獻
- Growth and characterization of Zn[feb5][febe]戓Mn戓 Se Epilayers and ZnSe/Zn[feb5][febe]戓Mn戓Se Quantum Wells
- 利用光反射調制光譜研究InGaAs/InAlAs單一量子井之躍遷能量隨溫度之變化關係
- Contactless Electroreflectance Modulation Spectroscopy of Zn Cd Se/ZnSe Multiple Quantum Wells
- Piezoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Structures
- Photoreflectance Characterization of Strained (111)B InGaAs/GaAs Quantum Well p-i-n Diode Structures
- 以分子束磊晶法成長不同緩衝層ZnCdSe/ZnSe/ZnMgSSe單一量子井分開侷限異質結構之缺陷及光特性之探討
- Interdisciplinary Characterization of Sandwiched SiGe thin Layers Grown by Molecular Beam Epitaxy
- Electroreflectance Measurements of Triple Quantum Well Structures
- 以非對稱電荷共振穿透結構及布拉格反射鏡結構製作高效率氮化銦鎵/氮化鎵多重量子井綠光發光二極體
- Photovoltaic Physics of InGaN/GaN Multiple Quantum Wells
頁籤選單縮合
題 名 | Growth and characterization of Zn[feb5][febe]戓Mn戓 Se Epilayers and ZnSe/Zn[feb5][febe]戓Mn戓Se Quantum Wells=硒化錳鋅磊晶層及硒化鋅/硒化錳鋅量子井的成長與量測 |
---|---|
作 者 | 周武清; 楊祝壽; 樂錦盛; 藍國瑛; 黃振忠; 陳棟民; | 書刊名 | 中原學報 |
卷 期 | 26:3 1998.08[民87.08] |
頁 次 | 頁1-7 |
分類號 | 349.2 |
關鍵詞 | 磊晶層; 量子井; 分子束磊晶; 反射; 光激螢光; 縱向光學聲子; 拉曼散射; 穿透式電子顯微術; 堆積缺陷; Epilayer; Quantum well; Molecular beam epitaxy; Reflectivity; Photoluminescence; Longitudinal optical phonon; Raman scattering; Transmission electron microscopy; Stacking faults; |
語 文 | 英文(English) |
英文摘要 | Zn1-xMnxSe epilayers and ZnSe/Zn1-xMnxSe quantum well structures were grown by molecular beam epitaxy. The growth was monitored by the reflection high energy electron diffraction. The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements. The longitudinal and transverse optical phonon energies were obtained by the Raman scattering and the far infrared reflectivity measurement. In addition, transmission electron microscopy was used to investigate the interfacial stacking faults and to characterize the growth rate. |
本系統中英文摘要資訊取自各篇刊載內容。