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題 名 | Piezoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Structures=利用壓電調制反射光譜研究數位梯度法製備之GaAs/AlGaAs量子井 |
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作 者 | 黃鶯聲; 林得裕; 程光蛟; |
書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷 期 | 22:2 1998.03[民87.03] |
頁 次 | 頁185-198 |
分類號 | 448.59 |
關鍵詞 | 壓電調制反射光譜; 數位梯度法; 量子井; Modulation spectroscopy; Piezoreflectance; Digital alloy compositional graded structures; GaAs/AlGaAs; Quantum well; |
語 文 | 英文(English) |
中文摘要 | 本論文利用調制反射光譜探討以數位梯度法製備之韭對稱三角形量子井( asymmetric triangular quantum well,簡稱ATQW)及對稱矩形量子井(symmetric rectangular quantum well,簡稱SRQW)之光學特性。量測溫度範圍為20至3O0K,其中壓 電調制屬於應力調制,而輕電洞帶對應力較敏感。詳鈿比較壓電調制及光子調制光譜,提 供一種簡易方法能夠辨識量子井內輕電洞與重電洞之躍遷訊號,對光譜訊息的解析有所助 益。運用包絡函數近似計算ATQW及SRQW之躍遷能量與實驗值相互比較,判定以數位梯度法 製備實驗樣品,確實能長出預先設計的結構。同時探討溫度改變對量子井帶間躍遷能量的 影響。此外也討論溫度變化對量子井結構11H激子躍遷信號展寬參數的影響。 |
英文摘要 | We have studied the piezoreflectance (PzR) spectra related to intersubband transitions from several (001) GaAs/A1GaAs structures fabricated by means of molecular beam epitaxy using the digital alloy compositional grading (DACG) method in a temperature range of 20 to 300 K. These samples include an asymmetric triangular quantum well (ATQW) and three symmetric rectangular quantum wells (SRQW) with different unit cells [50 k (x2), 25 A (x4) and 12.5 A (x8)1. A comparison of the relative intensity of the heavy - and light-hole related features in the PzR spectra and those from photoreflectance measurement reveals the contribution of the strain dependence of the energies of the confined states that allows us to identify unambiguously the features associated with the heavy- and light-hole valence bands. Comparison of the observed intersubband transitions with the envelope function calculations provides a self-consistent verification that the DACG method generated the desired potential profiles for the ATQW. For SRQWs, the 12.5 A unit cell sample essentially has the characteristics of the intended analog configuration while the other two samples displayed observable differences. Furthermore, detailed study of the temperature dependence of the excitonic transition energies indicates that the main influence of temperature on the quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. An anomalous behavior of the temperature dependence of the linewidth of the fundamental conduction to the heavy-hole excitonic feature of the samples is observed, and the possible contributions of the broadening parameters are discussed. |