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題 名 | The Study of Charge-to-Breakdown of Thin Gate Oxide for P狇-Poly-Si MOS Capacitor=P-型多晶矽金氧半電容器薄氧化層之崩潰電荷量研究 |
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作 者 | 王黎順; | 書刊名 | 明倫學報 |
卷 期 | 2 1998.03[民87.03] |
頁 次 | 頁75-88 |
分類號 | 448.5 |
關鍵詞 | P-型多晶矽金氧半電容器; 薄氧化層; 崩潰電荷量; |
語 文 | 英文(English) |
英文摘要 | The charge-to-breakdown (Q(+), Q(-)) for p-poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boronimplanted ploy-Si samples, the Q(+) increases with the dopant concentration, but Q(-) decreases with that. For same sample, a large difference between Q(+) and Q(-) was found. Meanwhile, the various degree of band-bending evidence of poly-Si was observed from C-V and the parallel shift of Fowler-Nordheim (F-N) tunneling under both bias in I-V measurements. From gate-voltage shift (△ Vg) data after constant current stress, the quantity and centroid of the generated positive trapped charge can be determined. The observed small Q(-) is somehow related to the grain size, interface roughness, location of hole traps in oxide, and band-bending voltage in poly-Si. Although the initial generation rate of positive trapped charges are comparable for both polarity stress, the subsequent location of hole traps depends on the stressing polarity. It will affect the electric field near cathode. This electric field can influence the value of Q. So, the above Q measurements can be explained by the location of hole traps. |
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