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題 名 | 高能金離子佈植於矽之縱向與橫向射程分佈研究=An Experimental Investigation of Longitudinal and Transverse Range Profiles of High-energy Implantation of Gold Ions into Silicon |
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作 者 | 梁正宏; 許智祐; 賴仲彥; 周金陶; 牛寰; 游文滄; | 書刊名 | 核子科學 |
卷 期 | 35:1 1998.02[民87.02] |
頁 次 | 頁49-54 |
分類號 | 449.4 |
關鍵詞 | 高能金離子; 矽; 射程分佈; Ion implantation; Projected range; Longitudinal range straggling; Transverse range straggling; Rutherford backscattering spectrome-try; |
語 文 | 英文(English) |
英文摘要 | Gold ions with energies of 880 to 2863 keV and a dose of 5*10□ ions/cm2 were implanted into silicon wafers at room temperature and tilted geometry. Longitudinal and transverse range parameters of gold ions implanted into silicon were measured using Rutherford back-scattering spectrometry along with Furukawa and Matsumara's formula. Calculations following the SRIM Monte-Carlo simulation code produce range parameters with which all the experimental data corresponded quite well. The average differences between measured and SRIM calculated values of projected range, longitudinal range straggling, and transverse range straggling were 12%, 16%, and 9%, respectively. |
本系統中英文摘要資訊取自各篇刊載內容。