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頁籤選單縮合
題名 | Range Profiles of 15-to 5000-keV Bismuth Ions Implanted into Silicon=15至5000keV鉍離子佈植於矽之射程分佈研究 |
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作者姓名(中文) | 梁正宏; | 書刊名 | 核子科學 |
卷期 | 34:5 1997.10[民86.10] |
頁次 | 頁350-357 |
分類號 | 449 |
關鍵詞 | 鉍離子; 矽; 射程分佈; Ion implantation; Range profile; Projected range; Straggling; |
語文 | 英文(English) |
英文摘要 | Bismuth ions wre implanted into silicon wafers at room temperature and in a wide ion-energy range of 15 to 5000keV. The experimental range profiles were obtained via SIMS measurements. The extracted range parameters (projected range and range Rp straggling △ Rp ) were compared with the calculated results using the Biersack theory as well as SRIM computer code. In addition to the first four moments of nuclear and electronic energy losses, inclusion of a finite maximum-impact parameter and inelastic collision effects in simulating the nuclear stopping process was considered in the calculations based on the Biersack theory. Comparing calculated with measured values reveals that the Biersack theory is superior to SRIM. The overall differences between the calculated results using the Biersack theory and the measured data are 6% and 11% for projected ranges and range stragglings, respectively. |
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