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| 題 名 | High Temperature InAs Infrared Detector Based on Metal-Insulator-Semiconductor Structure=金屬絕緣層半導體結構的高溫砷化銦紅外線偵測器之研究 |
|---|---|
| 作 者 | 蘇宏德; | 書刊名 | 光學工程 |
| 卷 期 | 52 1995.12[民84.12] |
| 頁 次 | 頁5-10 |
| 分類號 | 448.552 |
| 關鍵詞 | 金屬絕緣層; 半導體結構; 高溫; 砷化銦; 紅外線偵測器; |
| 語 文 | 英文(English) |
| 英文摘要 | The narrow bandgap III-V semiconductors InAs and InSb have large potential for infrared device applications. InSb infrared detectors have been extensively studied with satisfactory results. But its bandgap is so small (0.17 eV at 300 K) that it can work only at the temperature below 77 K. The energy gap of InAs (0.34 eV at 300 K) is larger than that of InSb, so InAs infrared detectors can be used in higher temperature that thermoelectric (TE) cooler can offer. The Au/Cr/a-SiN[9058]: H/ (n) InAs/ GaAs Metal-Insulator-Semiconductor (MIS) capacitor was fabricated successfully as a basic element of charge injection device using plasma enhanced chemical vapor deposition. The electrical properties were analyzed by the high frequency (1 MHz) capacitance-voltage and conductance-voltage measurements. When biased into deep depletion, the capacitor can be used as an integrated infrared (IR) detector. The temperature-dependant CID performance indicates that the InAs CID can be operated in higher temperature (180 K) than that of an InSb IR detector (77 K) and the Cooling can be done by thermoelectric (TE) cooler. |
本系統中英文摘要資訊取自各篇刊載內容。