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題 名 | 高速率平面結構砷化銦鎵p-i-n檢光器 |
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作 者 | 何文章; 施宏輝; 戴廷安; 陳建光; 莊榮敏; 林嘉堅; 林蔚; | 書刊名 | 電信研究 |
卷 期 | 24:6 1994.12[民83.12] |
頁 次 | 頁779-786 |
分類號 | 448.6 |
關鍵詞 | p-i-n檢光器; 平面結構; 砷化銦鎵; 高速率; |
語 文 | 中文(Chinese) |
中文摘要 | 平面結構雙異質p-I-n檢光器比傳統未加覆蓋層之平面型檢光器,具有更低的暗電流及更好的穩定性。適當的控制擴散深度,並採用較厚介電係數較小的介電質作為保護層,可有效降低元件電容。本計畫所研製之檢光器經測試結果顯示特性極佳,可符合OC-48需求。所獲致元件特性如 : -5V時暗電流可低至77pA及電容小於0.75pF,加抗反射層在1.6微米波長之量子效率為82.9%,線性度在2%以內,脈衝反應之上升時間為77 ps而3-dB頻寬為 4.1GHz,另外,檢光器接受 2.5Gb/s 的 NRZ 信號所呈現出的貓眼間既乾淨又對稱而且一致。 |
英文摘要 | Planar structure InP/InGaAs/InP p-i-n photodetectors with good stability and low dark current are fabricated- The performances of the devices -with wide-band gap cap layer are much better than those of conventional devices without cap layer. With the proper control of the p-n junction depth, and the passivation with a thicker dielectric film of smaller dielectric constant, the device capacitance is effectively reduced. In the static performances for the AR-coated devices at -5 V bias, dark current of 77pA, capacitance of 0.75pF, quantum efficiency of 82.9% at 1.6 μm wavelength, and the linearity of photoresponse of 2% are achieved. While in the dynamic response measurements, the devices show a rise time of pulse response of 77ps, and the 3-dB bandwidth of 4.1 GHz. Moreover, a clear, symmetrical and identical eye pattern for the psuedorandom non-return-to-zero (NRZ) signal up to 2.5 Gb/s is obtained. The photodetectors with above-mentioned performances meet the requirements for GC-48 (2.5 Gb/s bit-rate) applications in the synchronous digital hierachical (SDH) network. |
本系統中英文摘要資訊取自各篇刊載內容。