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題名 | 光電產業用濺鍍鉬靶開發=Development of Molybdenum Sputtering Targets for Using in Optoelectronics Industries |
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作 者 | 黃宏勝; 邱軍浩; 洪胤庭; 董寰乾; | 書刊名 | 鑛冶 |
卷期 | 58:2=226 2014.06[民103.06] |
頁次 | 頁50-58 |
分類號 | 454.9 |
關鍵詞 | 濺鍍鉬靶; 軋延; 濺鍍速率; 脆性; Molybdenum sputtering target; Rolling; Deposition rate; Brittleness; |
語文 | 中文(Chinese) |
中文摘要 | 鉬具有良好的導電、導熱性,並有接近半導體矽和玻璃的低熱膨脹係數,為液晶顯示器、觸控面板、及銅銦鎵硒薄膜太陽能等光電產業不可或缺的關鍵鍍膜材料。然而,鉬的熔點達2620℃、且高溫容易揮發、常溫為脆性,冶金特性與一般金屬截然不同,使得濺鍍鉬靶的開發有相當的難度。本研究旨在開發適合鍍膜產業使用之鉬靶及其量產技術,研究結果為:(1)於軋延階段,開發鉬封罐技術,有效解決鉬熱軋時的揮發及邊裂問題,並且大幅提高軋延單道次裁減量、減少總軋延道次,順利突破中鋼軋延設備限制,產出六代以上面板廠所需之鉬靶。(2)於調質熱處理階段,結合背向電子繞射(EBSD)、聚焦離子束(FIB)及原子力顯微鏡(AFM)的微區分析技術,解析出濺鍍過程中影響鉬靶濺鍍速率之機構,進而開發出產線最適軋延及調晶退火技術以控制微觀結構及結晶集合組織,大幅提升鉬靶濺鍍速率。(3)於變形校正階段,以三點彎曲實驗分析鉬靶之延性-脆性轉換溫度,並自行開發鉬靶溫間變形校正技術,有效改善熱處理後鉬靶平坦度不佳問題,大幅減少機械加工時間及材料損失,降低生產成本。上述的技術建立,使高脆性的鉬靶得以成功開發,並已落實應用於國內的光電產業,對提升國內廠商之競爭力有極大的幫助。 |
英文摘要 | Molybdenum (Mo) is an important sputtering material to deposit Mo thin film as a diffusion barrier layer or an electrode layer, which is used in the liquid crystal display (LCD), touch panel and thin-film PV (photovoltaics) industries due to its unique properties such as a high melting point, high thermal and electrical conductivities, and a low thermal expansion similar to that of silicon and glass. However, it has a high degree of difficulty to fabricate Mo targets due to Mo's different metallurgical characteristics compared to general metals such as a melting point of 2620˚C, likely to be volatile at elevated temperatures, and brittle at room temperature. The purpose of this study was to develop a Mo target with high deposition rate and its mass production techniques in order to be suitably used in coating industries. Firstly, a vacuum canning method was employed to wrap the Mo sintered ingots before the hot rolling process, so that the problems of severe volatilization and rolling edged-cracks at rolling stage were effectively suppressed. Moreover, the method can also significantly increase the rolling reduction ratio at every single rolling pass so that we have broken through the limitations of our processing equipments and have successfully produced large-sized Mo targets for 6th and 8th generation LCD production lines. Secondly, the microanalysis techniques of electron backscattered diffraction (EBSD), focused ion beam (FIB), and atomic force microscopy (AFM) were used to verify the mechanism of the microstructural effects on the deposition rate for Mo during the sputtering. By controlling the grain size, distortion of crystal lattice, and crystalline texture through optimization of the rolling and annealing processes, a great improvement in the deposition rate for Mo targets was realized. Thirdly, the 3-point bending test at various temperatures was carried out to analyze the ductile-brittle transition temperature for Mo and thus we have developed a warm-leveling process to improve the flatness of Mo target, resulting in reducing the machining time and material loss and thus significantly reducing the production costs. Finally, the Mo targets fabricated through these developed technologies have been successfully produced and applied in Taiwan's optoelectronics industries. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。